Datasheet > BAS85W

BAS85W

更新时间： 2024-12-01 14:53:31

品牌	Logo	应用领域
先科 - SWST		肖特基二极管
页数	文件大小	规格书
3页	169K
描述
肖特基二极管

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BAS85W 数据手册

BAS85W

Schottky Barrier Diode

DESCRIPTION

Cathode

Features

• Low forward voltage

Anode

Applications

• Voltage clamping

• Protection circuits

Top View

Simplified outline SOD-123 and symbol

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

Value

Unit

Reverse Voltage

V_R

I_F(AV)

I_FRM

I_FSM

P_D

Average Forward Rectified Current

Repetitive Peak Forward Current

Peak Forward Surge Current (tp = 10 ms)

Power Dissipation

200

℃

300

600

230

Junction Temperature

T_J

125

Storage Temperature Range

T_Stg

- 65 to + 150

℃

Thermal Resistance

Parameter

Symbol

R_θJA

Value

435

Unit

Typical Thermal Resistance Junction to Ambient ¹⁾

¹⁾Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

℃/W

Characteristics at T_a= 25℃

Parameter

Symbol

V_(BR)R

Min.

Typ.

Max.

Unit

Reverse Breakdown Voltage

at I_R= 100 µA

Forward Voltage

at I_F= 0.1 mA

at I_F= 1 mA

at I_F= 10 mA

at I_F= 30 mA

at I_F= 100 mA

240

320

400

500

800

V_F

Reverse Current

at V_R= 25 V

I_R

2.3

µA

Total Capacitance

at V_R= 1 V, f = 1 MHz

C_T

1 / 3

Dated : 14/09/2022 Rev : 02

12 3

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