BAS86

更新时间： 2024-11-11 12:21:19

品牌	Logo	应用领域
鲁光 - LGE		小信号肖特基二极管
页数	文件大小	规格书
2页	148K
描述
Small Signal Schottky Diode

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中文翻译

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技术参数
数据手册

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BAS86 技术参数

Case Style：	SOD-80	IF(A)：	200
VRRM (V)：	50	IFSM (A)：	0.3
VF (V)：	0.9	@ IF (A)：	100
Maximum reverse current：	5.0	TRR(nS)：
class：	Diodes

BAS86 数据手册

BAS86

Small Signal Schottky Diode

VOLTAGE RANGE: 50 V

CURRENT: 0.2 A

Mini-melf

Features

Cathode indification

For general purpose applications

This diode features very low turn-on voltage

and fast switching. These devices are protected

by a PN junction guard ring against excessive

voltage, such as electrostatic discharges

0.4 0.1

3.4 ^+0.3

-0.1

Mechanical Data

Dimensions in millimeters

Case:JEDEC mini-melf,glass case

Polarity: Color band denotes cathode end

Weight: Approx.0.031 grams

ABSOLUTE RATINGS

Value

UNITS

Symbols

Continuous reverse voltage

V_R

I_F

200 ¹⁾

500 ¹⁾

5 ¹⁾

200 ¹⁾

Forward continuous current

Peak forward current

Surge forw ard current

Power dissipation

T_A=25

I_FM

I_FSM

P_tot

T_J

t_p<1s,T_A=25

@ T_A=65

125

Junction temperature

c-55 ---+ 125

c-55 ---+ 150

Ambient operating temperature range

Storage temperature range

T_A

T_STG

1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature

ELECTRICAL CHARACTERISTICS

Symbols

V_R

Typ.

Max.

Min.

UNITS

Reverse breakdow n voltage

50.0

Forw ard voltage

Pulse test tp<300 s, <2%

@ I_F=0.1mA

0.30

0.38

0.45

0.60

0.90

@ I_F=1mA

V_F

@ I_F=10mA

@ I_F=30mA

@ I_F=100mA

Leakage current V_R=40V

5.0

I_R

C_d

t_rr

Diode capacitance at V_R=1V,f=1MHz

Reverse recovery time @ I_F=10mA,I_R=10mA,I_R=1mA

Thermal resistance junction to ambient

R_θ

430¹⁾

1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature

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mail:lge@luguang.cn

中文翻译

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