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BAS86/D2 PDF预览

BAS86/D2

更新时间: 2024-12-01 14:47:59
品牌 Logo 应用领域
威世 - VISHAY 开关二极管
页数 文件大小 规格书
2页 19K
描述
Rectifier Diode, Schottky, 1 Element, 0.2A, 50V V(RRM), Silicon, GLASS, MINIMELF-2

BAS86/D2 技术参数

是否无铅:不含铅是否Rohs认证:不符合
生命周期:Transferred零件包装代码:MELF
包装说明:O-LELF-R2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.52
Is Samacsys:N其他特性:FAST SWITCHING
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.3 VJESD-30 代码:O-LELF-R2
JESD-609代码:e0元件数量:1
端子数量:2最高工作温度:125 °C
最大输出电流:0.2 A封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
最大功率耗散:0.2 W认证状态:Not Qualified
最大重复峰值反向电压:50 V最大反向恢复时间:0.005 µs
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Tin/Lead (Sn/Pb)
端子形式:WRAP AROUND端子位置:END
Base Number Matches:1

BAS86/D2 数据手册

 浏览型号BAS86/D2的Datasheet PDF文件第2页 
BAS86  
New Product  
Vishay Semiconductors  
formerly General Semiconductor  
Schottky Diode  
Features  
MiniMELF (SOD-80C)  
For general purpose applications  
Cathode Band  
This diode features low turn-on voltage. The  
devices are protected by a PN junction guard ring  
against excessive voltage, such as electrostatic  
discharges.  
.063 (1.6)  
.051 (1.3)  
Dia.  
Metal-on-silicon Schottky barrier device which is  
protected by a PN junction guard ring.  
The low forward voltage drop and fast switching  
make it ideal for protection of MOS devices,  
steering, biasing and coupling diodes for fast  
switching and low logic level applications  
.019 (0.48)  
.011 (0.28)  
.146 (3.7)  
.130 (3.3)  
This diode is also available in a DO-35 case with  
type designation BAT86.  
Dimensions in inches and (millimeters)  
Mechanical Data  
Case: MiniMELF Glass Case (SOD-80C)  
Weight: approx. 0.05g  
Cathode Band Color: Green  
Packaging Codes/Options:  
D1/10K per 13reel (8mm tape), 20K/box  
D2/2.5K per 7reel (8mm tape), 20K/box  
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)  
Parameter  
Symbol  
Value  
Unit  
V
Continuous Reverse Voltage  
VR  
50  
Forward Continuous Current at Tamb = 25°C  
Repetitive Forward Current at tp < 1s, υ 0.5, Tamb = 25°C  
Power Dissipation at Tamb = 25°C  
Thermal Resistance Junction to Ambiant Air  
Junction Temperature  
IF  
200(1)  
mA  
mA  
mW  
°C/W  
°C  
IFRM  
Ptot  
RθJA  
Tj  
500(1)  
200(1)  
300(1)  
125  
Ambient Operating Temperature Range  
Storage Temperature Range  
Tamb  
TS  
65 to +125  
65 to +150  
°C  
°C  
Note: (1) Valid provided that electrodes are kept at ambient temperature.  
Document Number 88132  
10-May-02  
www.vishay.com  
1

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