5秒后页面跳转
BAS86 PDF预览

BAS86

更新时间: 2024-09-30 06:41:27
品牌 Logo 应用领域
RECTRON 整流二极管肖特基二极管
页数 文件大小 规格书
1页 37K
描述
SCHOTTKY DIODES

BAS86 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:MELF
包装说明:O-LELF-R2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.69
Is Samacsys:N外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:O-LELF-R2
JESD-609代码:e3元件数量:1
端子数量:2最高工作温度:125 °C
最大输出电流:0.2 A封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):265最大功率耗散:0.2 W
认证状态:Not Qualified表面贴装:YES
技术:SCHOTTKY端子面层:Matte Tin (Sn)
端子形式:WRAP AROUND端子位置:END
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

BAS86 数据手册

  
RECTRON  
TECHNICAL SPECIFICATION  
SEMICONDUCTOR  
BAS86  
SCHOTTKY DIODES  
FEATURES  
Fast Switching Device(TRR<4.0nS)  
Mini MELF Glass Case (SOD-80)  
Through-Hole Device Type Mounting  
Hermetically Sealed Glass  
*
*
*
*
*
*
SOD-80  
Compression Bonded Construction  
All external surfaces are corrosion resistant and leads  
are readily solderable  
.016(0.40)  
.008(0.20)  
.142(3.6)  
.134(3.4)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 oC ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGES ( @ TA = 25oC unless otherwise noted )  
SYMBOL  
BAS86  
UNITS  
RATINGS  
V
R
I
F
Maximum Forward Comtinuous Reverse Voltage  
50  
V
Maximum Forward Comtinuous Current @ T =25OC  
A
200  
mAmps  
I
Maximum Peak Forward Current tp<1s  
500  
5
mAmps  
FM  
Surge Forward Current @ tp=10ms  
I
Amps  
mW  
FSM  
Maximum Power Dissipation @ T =65OC  
A
200  
P
D
OC  
OC  
Junction Temperature  
T
J
125  
T
Storage Temperature Range  
-65 to + 150  
STG  
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )  
CHARACTERISTICS SYMBOL  
Reverse voltage leakage current (V =40V)  
MIN.  
-
TYP.  
-
MAX.  
5
UNITS  
I
µA  
R
R
(I =0.1mA)  
F
-
-
-
-
-
0.30  
0.38  
0.45  
0.60  
0.90  
(I =1mA)  
F
Forward voltage Pulse Tesx tp<300µs,δ<2% (I =10mA)  
V
C
F
F
-
-
V
(I =30mA)  
F
(I =100mA)  
F
Diode capacitance (V =1,f=1MHz)  
-
8
R
D
pF  
2006-3  

与BAS86相关器件

型号 品牌 获取价格 描述 数据表
BAS86,115 NXP

获取价格

BAS86 - Schottky barrier single diode MELF 2-Pin
BAS86/D1 VISHAY

获取价格

Rectifier Diode, Schottky, 1 Element, 0.2A, 50V V(RRM), Silicon, GLASS, MINIMELF-2
BAS86/D2 VISHAY

获取价格

Rectifier Diode, Schottky, 1 Element, 0.2A, 50V V(RRM), Silicon, GLASS, MINIMELF-2
BAS86_00 NXP

获取价格

Schottky barrier diode
BAS86_08 VISHAY

获取价格

Small Signal Schottky Diode
BAS86_11 VISHAY

获取价格

Small Signal Schottky Diode
BAS86_12 VISHAY

获取价格

Small Signal Schottky Diode
BAS86_15 GOOD-ARK

获取价格

Small-Signal Diode Schottky Diode
BAS86112 NXP

获取价格

DIODE 0.2 A, SILICON, SIGNAL DIODE, Signal Diode
BAS86135 NXP

获取价格

DIODE 0.2 A, SILICON, SIGNAL DIODE, Signal Diode