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BAS85-M-18 PDF预览

BAS85-M-18

更新时间： 2024-11-11 22:04:11
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 82K
描述
DIODE SCHOTTKY 30V 200MA SOD80

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中文翻译

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BAS85-M-18 数据手册

 浏览型号BAS85-M-18的Datasheet PDF文件第2页浏览型号BAS85-M-18的Datasheet PDF文件第3页浏览型号BAS85-M-18的Datasheet PDF文件第4页 
BAS85-M  
Vishay Semiconductors  
www.vishay.com  
Small Signal Schottky Diode  
FEATURES  
• For general purpose applications  
• This diode features low turn-on voltage  
• The devices are protected by a PN junction  
guard ring against excessive voltage, such as  
electrostatic discharges  
• AEC-Q101 qualified  
DESIGN SUPPORT TOOLS click logo to get started  
• Material categorization: for definitions of  
compliance  
please  
see  
www.vishay.com/doc?99912  
Models  
Available  
APPLICATIONS  
MECHANICAL DATA  
• Applications where a very low forward voltage is required  
Case: MiniMELF (SOD-80)  
Weight: approx. 31 mg  
Cathode band color: black  
Packaging codes/options:  
18/10K per 13" reel (8 mm tape), 10K/box  
08/2.5K per 7" reel (8 mm tape), 12.5K/box  
PARTS TABLE  
PART  
ORDERING CODE  
CIRCUIT CONFIGURATION  
REMARKS  
BAS85-M  
BAS85-M-18 or BAS85-M-08  
Single  
Tape and reel  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
VALUE  
30  
200  
300  
600  
UNIT  
Continuous reverse voltage  
Forward continuous current (1)  
Peak forward current (1)  
Surge forward current (1)  
Power dissipation (1)  
VR  
IF  
IFM  
IFSM  
Ptot  
V
mA  
mA  
mA  
mW  
tp < 1 s  
Tamb = 65 °C  
200  
Note  
(1)  
Valid provided that electrodes are kept at ambient temperature.  
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
Thermal resistance junction to ambient air (1)  
Junction temperature  
TEST CONDITION  
SYMBOL  
RthJA  
Tj  
VALUE  
UNIT  
K/W  
°C  
430  
125  
Storage temperature range  
Tstg  
-55 to +150  
°C  
Note  
(1)  
Valid provided that electrodes are kept at ambient temperature.  
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
MIN.  
TYP.  
MAX.  
UNIT  
Reverse breakdown voltage  
Leakage current  
IR = 10 μA (pulsed)  
V(BR)  
IR  
30  
V
VR = 25 V  
0.2  
2
μA  
mV  
mV  
mV  
mV  
mV  
pF  
Pulse test tp < 300 μs, IF = 0.1 mA  
Pulse test tp < 300 μs, IF = 1 mA  
Pulse test tp < 300 μs, IF = 10mA  
Pulse test tp < 300 μs, IF = 30 mA  
Pulse test tp < 300 μs, IF = 100 mA  
VR = 1 V, f = 1 MHz  
VF  
VF  
VF  
VF  
VF  
CD  
trr  
240  
320  
400  
Forward voltage  
500  
800  
10  
5
Diode capacitance  
Reverse recovery time  
IF = 10 mA, IR = 10 mA, iR = 1 mA  
ns  
Rev. 1.2, 02-Jun-17  
Document Number: 83403  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234

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