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BAS85L0G PDF预览

BAS85L0G

更新时间: 2024-12-01 01:14:31
品牌 Logo 应用领域
TSC /
页数 文件大小 规格书
3页 192K
描述
Hermetically Sealed Glass Fast Switching Schottky Barrier Diodes

BAS85L0G 数据手册

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BAS85  
Taiwan Semiconductor  
CREAT BY ART  
Small Signal Product  
Hermetically Sealed Glass Fast Switching Schottky Barrier Diodes  
FEATURES  
- Low forward voltage drop  
- Ideal for automated placement  
- Hermetically sealed glass  
- Compression bonded construction  
- All external surfaces are corrosion  
resistant and leads are readily solderable  
- Solder hot dip tin (Sn) lead finish  
MINI MELF  
MECHANICAL DATA  
- Polarity: Indicated by black cathode band  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)  
PARAMETER  
VALUE  
SYMBOL  
PD  
UNIT  
mW  
V
Power Dissipation  
200  
Repetitive Peak Reverse Voltage  
Maximum DC Blocking Voltage  
Average Forward Rectified Current  
Peak Forward Surge Current  
Operating Junction Temperature  
Storage Temperature Range  
VRRM  
VR  
30  
30  
200  
V
IF(AV)  
IFSM  
mA  
4
A
oC  
oC  
TJ  
125  
TSTG  
-65 to +125  
PARAMETER  
MIN  
30  
TYP  
MAX  
SYMBOL  
UNIT  
V
IR=10μA  
VR=25V  
BV  
Breakdown Voltage  
Reverse Leakage Current  
Forward Voltage  
IR  
2
μA  
IF=0.1mA  
0.24  
0.32  
0.40  
0.50  
0.80  
IF=1.0mA  
IF=10mA  
VF  
V
IF=30mA  
IF=100mA  
(Note 1)  
trr  
5
Reverse Recovery Time  
Junction Capacitance  
ns  
VR=1V, f=1.0MHz  
CJ  
10  
pF  
Note 1: Reverse recovery test conditions : IF=IR=10mA, RL=100, IRR=1mA  
Document Number: DS_S1412007  
Version: C14  

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