Datasheet > 晶体管 > 功率场效应晶体管> APTM100H18FG

APTM100H18FG

更新时间： 2024-11-20 04:06:39

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
6页	287K
描述
Full - Bridge MOSFET Power Module

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中文翻译

获取价格

数据手册

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APTM100H18FG 数据手册

APTM100H18FG

V_DSS= 1000V

Full - Bridge

R_DSon= 180mΩ typ @ Tj = 25°C

MOSFET Power Module

I_D= 43A @ Tc = 25°C

Application

VBUS

•

Welding converters

Switched Mode Power Supplies

Uninterruptible Power Supplies

Motor control

Features

•

Power MOS 7^®FREDFETs

Low R_DSon

Low input and Miller capacitance

Low gate charge

Fast intrinsic reverse diode

Avalanche energy rated

Very rugged

0/VBUS

•

Kelvin source for easy drive

Very low stray inductance

Symmetrical design

M5 power connectors

OUT1

OUT2

•

High level of integration

VBUS

0/VBUS

Benefits

•

Outstanding performance at high frequency operation

Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

Low profile

RoHS Compliant

Absolute maximum ratings

Symbol

Parameter

Max ratings

Unit

V_DSS

Drain - Source Breakdown Voltage

1000

T_c= 25°C

172

±30

210

780

I_D

Continuous Drain Current

T_c= 80°C

I_DM

V_GS

R_DSon

P_D

Pulsed Drain current

Gate - Source Voltage

mΩ

Drain - Source ON Resistance

Maximum Power Dissipation

T_c= 25°C

I_AR

E_AR

E_AS

Avalanche current (repetitive and non repetitive)

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

3000

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

www.microsemi.com

1 – 6

12 3 4 5 6

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