APTM100H35FT

更新时间： 2024-11-20 06:37:31

品牌	Logo	应用领域
ADPOW		/
页数	文件大小	规格书
6页	316K
描述
Full - Bridge MOSFET Power Module

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中文翻译

获取价格

数据手册

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APTM100H35FT 数据手册

APTM100H35FT

V_DSS= 1000V

Full - Bridge

R_DSon= 350mΩ max @ Tj = 25°C

MOSFET Power Module

I_D= 22A @ Tc = 25°C

Application

VBUS

•

Welding converters

Switched Mode Power Supplies

Uninterruptible Power Supplies

Motor control

OUT1

OUT2

Features

•

Power MOS 7^®FREDFETs

Low R_DSon

Low input and Miller capacitance

Low gate charge

Fast intrinsic reverse diode

Avalanche energy rated

Very rugged

NT C1

0/VBUS

NTC2

•

Kelvin source for easy drive

Very low stray inductance

Symmetrical design

Lead frames for power connections

•

Internal thermistor for temperature monitoring

High level of integration

OUT2

OUT1

Benefits

•

Outstanding performance at high frequency operation

Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

Solderable terminals both for power and signal for

easy PCB mounting

VBUS

0/VBUS

NTC2

NTC1

•

Low profile

Absolute maximum ratings

Symbol

Parameter

Max ratings

Unit

V_DSS

Drain - Source Breakdown Voltage

1000

T_c= 25°C

I_D

Continuous Drain Current

T_c= 80°C

I_DM

V_GS

R_DSon

Pulsed Drain current

Gate - Source Voltage

Drain - Source ON Resistance

±30

350

mΩ

P_D

I_AR

E_AR

E_AS

Maximum Power Dissipation

T_c= 25°C

390

3000

Avalanche current (repetitive and non repetitive)

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.

APT website – http://www.advancedpower.com

1 – 6

12 3 4 5 6

中文翻译

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