Datasheet > APTM100H46FT3G-Module

APTM100H46FT3G-Module

更新时间： 2024-11-06 14:53:11

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
6页	326K
描述
FREDFETsLow RDSonLow input and Miller capacitanceLow gate chargeFast intrinsic reverse diodeAvalan

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APTM100H46FT3G-Module 数据手册

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APTM100H46FT3G

V_DSS= 1000V

R_DSon= 460m typ @ Tj = 25°C

I_D= 19A @ Tc = 25°C

Full bridge

MOSFET Power Module

Application



Welding converters

Switched Mode Power Supplies

Uninterruptible Power Supplies

Motor control

Features



Power MOS 8™ Fast FREDFETs

Low R_DSon

Low input and Miller capacitance

Low gate charge

Fast intrinsic reverse diode

Avalanche energy rated

Very rugged



Very low stray inductance

Kelvin source for easy drive

Internal thermistor for temperature monitoring

Benefits



Outstanding performance at high frequency operation

Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

Solderable terminals both for power and signal for

easy PCB mounting



Low profile

Each leg can be easily paralleled to achieve a phase

leg of twice the current capability



RoHS Compliant

All multiple inputs and outputs must be shorted together

Example: 13/14 ; 29/30 ; 22/23 …

All ratings @ T_j= 25°C unless otherwise specified

Absolute maximum ratings

Symbol

Parameter

Drain - Source Voltage

Max ratings

1000

Unit

V_DSS

T_c= 25°C

T_c= 80°C

I_D

Continuous Drain Current

I_DM

V_GS

R_DSon

Pulsed Drain current

Gate - Source Voltage

Drain - Source ON Resistance

120

±30

552

357

m

P_D

Power Dissipation

T_c= 25°C

I_AR

Avalanche current (repetitive and non repetitive)

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

1 – 6

www.microsemi.com

12 3 4 5 6

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