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APTM100SK18T PDF预览

APTM100SK18T

更新时间: 2024-11-24 04:32:51
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页数 文件大小 规格书
6页 315K
描述
Buck chopper MOSFET Power Module

APTM100SK18T 技术参数

生命周期:Transferred包装说明:FLANGE MOUNT, R-XUFM-X12
Reach Compliance Code:unknown风险等级:5.6
Is Samacsys:N其他特性:AVALANCHE RATED
雪崩能效等级(Eas):3000 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE AND THERMISTOR最小漏源击穿电压:1000 V
最大漏极电流 (ID):43 A最大漏源导通电阻:0.18 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-XUFM-X12
元件数量:1端子数量:12
工作模式:ENHANCEMENT MODE封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):172 A
认证状态:Not Qualified表面贴装:NO
端子形式:UNSPECIFIED端子位置:UPPER
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

APTM100SK18T 数据手册

 浏览型号APTM100SK18T的Datasheet PDF文件第2页浏览型号APTM100SK18T的Datasheet PDF文件第3页浏览型号APTM100SK18T的Datasheet PDF文件第4页浏览型号APTM100SK18T的Datasheet PDF文件第5页浏览型号APTM100SK18T的Datasheet PDF文件第6页 
APTM100SK18T  
VDSS = 1000V  
Buck chopper  
RDSon = 180mmax @ Tj = 25°C  
MOSFET Power Module  
ID = 43A @ Tc = 25°C  
Application  
VBUS  
NTC2  
AC and DC motor control  
Q1  
Switched Mode Power Supplies  
Features  
G1  
S1  
Power MOS 7® MOSFETs  
-
-
-
-
-
Low RDSon  
OUT  
Low input and Miller capacitance  
Low gate charge  
Avalanche energy rated  
Very rugged  
Kelvin source for easy drive  
Very low stray inductance  
0/VBUSSENSE  
-
-
Symmetrical design  
0/VBUS  
NTC1  
Lead frames for power connections  
Internal thermistor for temperature monitoring  
High level of integration  
Benefits  
0/ VB US  
OUT  
SENSE  
Outstanding performance at high frequency operation  
Direct mounting to heatsink (isolated package)  
Low junction to case thermal resistance  
Solderable terminals both for power and signal for  
easy PCB mounting  
OUT  
VBUS  
0/ VB US  
S1  
G1  
NTC2  
NTC1  
0/ VB US  
SENSE  
Low profile  
Absolute maximum ratings  
Symbol  
Parameter  
Max ratings  
Unit  
VDSS  
Drain - Source Breakdown Voltage  
1000  
V
Tc = 25°C  
43  
33  
172  
±30  
180  
780  
ID  
Continuous Drain Current  
A
Tc = 80°C  
IDM  
VGS  
RDSon  
PD  
Pulsed Drain current  
Gate - Source Voltage  
V
m  
W
Drain - Source ON Resistance  
Maximum Power Dissipation  
Tc = 25°C  
IAR  
EAR  
EAS  
Avalanche current (repetitive and non repetitive)  
25  
A
Repetitive Avalanche Energy  
50  
mJ  
Single Pulse Avalanche Energy  
3000  
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.  
APT website – http://www.advancedpower.com  
1 – 6  

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