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APTM100SKM90 PDF预览

APTM100SKM90

更新时间: 2024-11-05 04:04:27
品牌 Logo 应用领域
ADPOW 晶体晶体管功率场效应晶体管开关脉冲斩波器局域网
页数 文件大小 规格书
6页 304K
描述
Buck chopper MOSFET Power Module

APTM100SKM90 技术参数

生命周期:Transferred包装说明:FLANGE MOUNT, R-XUFM-X5
Reach Compliance Code:unknown风险等级:5.6
Is Samacsys:N其他特性:AVALANCHE RATED
雪崩能效等级(Eas):3000 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:1000 V
最大漏极电流 (ID):78 A最大漏源导通电阻:0.09 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-XUFM-X5
元件数量:1端子数量:5
工作模式:ENHANCEMENT MODE封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):312 A
认证状态:Not Qualified表面贴装:NO
端子形式:UNSPECIFIED端子位置:UPPER
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

APTM100SKM90 数据手册

 浏览型号APTM100SKM90的Datasheet PDF文件第2页浏览型号APTM100SKM90的Datasheet PDF文件第3页浏览型号APTM100SKM90的Datasheet PDF文件第4页浏览型号APTM100SKM90的Datasheet PDF文件第5页浏览型号APTM100SKM90的Datasheet PDF文件第6页 
APTM100SKM90  
VDSS = 1000V  
Buck chopper  
RDSon = 90mmax @ Tj = 25°C  
MOSFET Power Module  
ID = 78A @ Tc = 25°C  
Application  
VBUS  
Q1  
AC and DC motor control  
Switched Mode Power Supplies  
G1  
Features  
Power MOS 7® MOSFETs  
OUT  
-
-
-
-
-
Low RDSon  
S1  
Low input and Miller capacitance  
Low gate charge  
CR2  
Avalanche energy rated  
Very rugged  
Kelvin source for easy drive  
Very low stray inductance  
0/VBUS  
-
-
Symmetrical design  
M5 power connectors  
High level of integration  
Benefits  
G1  
VBUS  
0/VBUS  
OUT  
Outstanding performance at high frequency operation  
Direct mounting to heatsink (isolated package)  
Low junction to case thermal resistance  
Low profile  
S1  
Absolute maximum ratings  
Symbol  
Parameter  
Max ratings  
Unit  
VDSS  
Drain - Source Breakdown Voltage  
1000  
V
Tc = 25°C  
78  
59  
312  
±30  
90  
ID  
Continuous Drain Current  
A
Tc = 80°C  
IDM  
VGS  
Pulsed Drain current  
Gate - Source Voltage  
V
m  
W
RDSon  
Drain - Source ON Resistance  
Maximum Power Dissipation  
PD  
IAR  
EAR  
EAS  
Tc = 25°C  
1250  
Avalanche current (repetitive and non repetitive)  
25  
50  
3000  
A
Repetitive Avalanche Energy  
mJ  
Single Pulse Avalanche Energy  
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.  
APT website – http://www.advancedpower.com  
1 – 6  

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