Datasheet > APTM100H45STG-Module

APTM100H45STG-Module

更新时间： 2024-11-25 14:52:19

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
8页	667K
描述
MOSFETsLow RDSonLow input and Miller capacitanceLow gate chargeAvalanche energy ratedVery ruggedKe

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APTM100H45STG-Module 数据手册

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APTM100H45STG

V_DSS= 1000V

Full bridge

Series & parallel diodes

MOSFET Power Module

_DSon= 450mΩ typ @ Tj = 25°C

I_D= 18A @ Tc = 25°C

Application

•

Motor control

Switched Mode Power Supplies

Uninterruptible Power Supplies

VBUS

CR1A

CR3A

CR1B CR3B

OUT1 OUT2

Features

Power MOS 7^®MOSFETs

•

Low R_DSon

Low input and Miller capacitance

Low gate charge

Avalanche energy rated

Very rugged

CR2A

CR4A

CR2B CR4B

•

Kelvin source for easy drive

Very low stray inductance

0/VBUS

NTC1

NTC2

Symmetrical design

Lead frames for power connections

•

Internal thermistor for temperature monitoring

High level of integration

Benefits

•

Outstanding performance at high frequency operation

Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

Solderable terminals both for power and signal for

easy PCB mounting

•

Low profile

RoHS Compliant

All ratings @ T_j= 25°C unless otherwise specified

Absolute maximum ratings

Symbol

Parameter

Max ratings

Unit

V_DSS

Drain - Source Breakdown Voltage

1000

T_c= 25°C

T_c= 80°C

I_D

Continuous Drain Current

I_DM

V_GS

R_DSon

Pulsed Drain current

Gate - Source Voltage

Drain - Source ON Resistance

±30

540

mΩ

T_c= 25°C

P_D

I_AR

E_AR

E_AS

Maximum Power Dissipation

357

Avalanche current (repetitive and non repetitive)

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

2500

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

www.microsemi.com

1 – 8

12 3 4 5 6 7 8

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