Datasheet > APTM100H18FG-Module

APTM100H18FG-Module

更新时间： 2024-11-21 14:55:43

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
7页	567K
描述
FREDFETsLow RDSonLow input and Miller capacitanceLow gate chargeFast intrinsic reverse diodeAvalan

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

APTM100H18FG-Module 数据手册

浏览型号APTM100H18FG-Module的Datasheet PDF文件第2页

浏览型号APTM100H18FG-Module的Datasheet PDF文件第3页

浏览型号APTM100H18FG-Module的Datasheet PDF文件第4页

浏览型号APTM100H18FG-Module的Datasheet PDF文件第5页

APTM100H18FG

V_DSS= 1000V

Full - Bridge

MOSFET Power Module

R_DSon= 180m typ @ Tj = 25°C

I_D= 43A @ Tc = 25°C

Application

VBUS



Welding converters

Switched Mode Power Supplies

Uninterruptible Power Supplies

Motor control

Features



Power MOS 7^®FREDFETs

Low R_DSon

Low input and Miller capacitance

Low gate charge

Fast intrinsic reverse diode

Avalanche energy rated

Very rugged

0/VBUS



Kelvin source for easy drive

Very low stray inductance

Symmetrical design

M5 power connectors



High level of integration

Benefits



Outstanding performance at high frequency operation

Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

Low profile

RoHS Compliant

Absolute maximum ratings

Symbol

Parameter

Max ratings

Unit

V_DSS

Drain - Source Breakdown Voltage

1000

T_c= 25°C

T_c= 80°C

I_D

Continuous Drain Current

I_DM

V_GS

R_DSon

Pulsed Drain current

Gate - Source Voltage

Drain - Source ON Resistance

172

±30

210

m

P_D

I_AR

E_AR

E_AS

Maximum Power Dissipation

T_c= 25°C

780

Avalanche current (repetitive and non repetitive)

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

3000

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

1 – 7

www.microsemi.com

12 3 4 5 6 7

中文翻译

下载PDF

与APTM100H18FG-Module相关器件

型号	品牌	获取价格	描述	数据表
APTM100H35FT	ADPOW	获取价格	Full - Bridge MOSFET Power Module
APTM100H35FT3	ADPOW	获取价格	Full - Bridge MOSFET Power Module
APTM100H35FT3G	MICROSEMI	获取价格	Full - Bridge MOSFET Power Module
APTM100H35FT3G-Module	MICROCHIP	获取价格	FREDFETsLow RDSonLow input and Miller capacitanceLow gate chargeFast intrinsic reverse dio
APTM100H35FTG	MICROSEMI	获取价格	Full - Bridge MOSFET Power Module
APTM100H35FTG-Module	MICROCHIP	获取价格	FREDFETsLow RDSonLow input and Miller capacitanceLow gate chargeFast intrinsic reverse dio
APTM100H40FT3G	MICROSEMI	获取价格	Full - Bridge MOSFET Power Module
APTM100H45FT3	ADPOW	获取价格	Full - Bridge MOSFET Power Module
APTM100H45FT3G	MICROSEMI	获取价格	Full - Bridge MOSFET Power Module
APTM100H45FT3G-Module	MICROCHIP	获取价格	FREDFETsLow RDSonLow input and Miller capacitanceLow gate chargeFast intrinsic reverse dio