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APTM100H40FT3G PDF预览

APTM100H40FT3G

更新时间： 2024-11-20 06:37:31
品牌 Logo 应用领域
美高森美 - MICROSEMI /
页数 文件大小 规格书
5页 178K
描述
Full - Bridge MOSFET Power Module

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中文翻译

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APTM100H40FT3G 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：,Reach Compliance Code：unknown
风险等级：5.84最大漏极电流 (Abs) (ID)：21 A
FET 技术：METAL-OXIDE SEMICONDUCTOR元件数量：1
最高工作温度：150 °C最大功率耗散 (Abs)：390 W
子类别：FET General Purpose PowerBase Number Matches：1

APTM100H40FT3G 数据手册

 浏览型号APTM100H40FT3G的Datasheet PDF文件第2页浏览型号APTM100H40FT3G的Datasheet PDF文件第3页浏览型号APTM100H40FT3G的Datasheet PDF文件第4页浏览型号APTM100H40FT3G的Datasheet PDF文件第5页 
APTM100H40FT3G  
VDSS = 1000V  
Full - Bridge  
MOSFET Power Module  
R
DSon = 400mΩ typ @ Tj = 25°C  
ID = 21A @ Tc = 25°C  
13 14  
Application  
Q1  
Q3  
•
•
•
•
Welding converters  
Switched Mode Power Supplies  
Uninterruptible Power Supplies  
Motor control  
18  
19  
11  
10  
22  
23  
7
8
Features  
Q2  
Q4  
•
Power MOS 8™ Fast FREDFETs  
-
-
-
-
-
-
Low RDSon  
Low input and Miller capacitance  
Low gate charge  
Fast intrinsic reverse diode  
Avalanche energy rated  
Very rugged  
4
3
26  
27  
29  
15  
30  
31  
R1  
32  
16  
•
Very low stray inductance  
Symmetrical design  
-
28 27 26 25  
23 22  
20 19 18  
•
•
Internal thermistor for temperature monitoring  
High level of integration  
29  
30  
16  
15  
Benefits  
•
•
•
•
Outstanding performance at high frequency operation  
Direct mounting to heatsink (isolated package)  
Low junction to case thermal resistance  
Solderable terminals both for power and signal for  
easy PCB mounting  
31  
32  
14  
13  
2
3
4
7
8
10 11  
12  
All multiple inputs and outputs must be shorted together  
Example: 13/14 ; 29/30 ; 22/23 …  
•
•
Low profile  
Each leg can be easily paralleled to achieve a phase  
leg of twice the current capability  
RoHS Compliant  
•
Absolute maximum ratings  
Symbol  
Parameter  
Max ratings  
Unit  
VDSS  
Drain - Source Breakdown Voltage  
1000  
21  
16  
V
Tc = 25°C  
Tc = 80°C  
ID  
Continuous Drain Current  
A
IDM  
VGS  
RDSon  
Pulsed Drain current  
Gate - Source Voltage  
Drain - Source ON Resistance  
140  
±30  
480  
390  
V
mΩ  
W
PD  
Maximum Power Dissipation  
Tc = 25°C  
IAR  
Avalanche current (repetitive and non repetitive)  
18  
A
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note  
APT0502 on www.microsemi.com  
1 – 5  
www.microsemi.com  
12345

中文翻译

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