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APTM100H45SCTG-Module PDF预览

APTM100H45SCTG-Module

更新时间： 2024-11-25 14:53:19
品牌 Logo 应用领域
美国微芯 - MICROCHIP /
页数 文件大小 规格书
9页 693K
描述
MOSFETsLow RDSonLow input and Miller capacitanceLow gate chargeAvalanche energy ratedVery ruggedKe

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APTM100H45SCTG-Module 数据手册

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APTM100H45SCTG  
VDSS = 1000V  
DSon = 450mΩ typ @ Tj = 25°C  
ID = 18A @ Tc = 25°C  
Full bridge Series & SiC parallel diodes  
MOSFET Power Module  
R
VBUS  
Application  
•
•
•
Motor control  
Switched Mode Power Supplies  
Uninterruptible Power Supplies  
CR1A  
CR3A  
CR1B CR3B  
OUT1 OUT2  
Q1  
Q3  
Features  
G3  
S3  
Power MOS 7® MOSFETs  
G1  
S1  
•
-
-
-
-
Low RDSon  
Low input and Miller capacitance  
Low gate charge  
CR2A  
CR4A  
CR2B CR4B  
Q2  
Q4  
Avalanche energy rated  
G4  
S4  
•
Parallel SiC Schottky Diode  
G2  
S2  
-
Zero reverse recovery  
-
-
-
Zero forward recovery  
Temperature Independent switching behavior  
Positive temperature coefficient on VF  
0/VBUS  
NTC1  
NTC2  
•
•
Kelvin source for easy drive  
Very low stray inductance  
-
-
Symmetrical design  
Lead frames for power connections  
•
•
Internal thermistor for temperature monitoring  
High level of integration  
Benefits  
•
•
•
•
Outstanding performance at high frequency operation  
Direct mounting to heatsink (isolated package)  
Low junction to case thermal resistance  
Solderable terminals both for power and signal for  
easy PCB mounting  
•
•
Low profile  
RoHS Compliant  
All ratings @ Tj = 25°C unless otherwise specified  
Absolute maximum ratings  
Symbol  
Parameter  
Max ratings  
Unit  
VDSS  
Drain - Source Breakdown Voltage  
1000  
18  
14  
V
Tc = 25°C  
Tc = 80°C  
ID  
Continuous Drain Current  
A
IDM  
VGS  
RDSon  
Pulsed Drain current  
Gate - Source Voltage  
Drain - Source ON Resistance  
72  
±30  
540  
V
mΩ  
W
Tc = 25°C  
PD  
IAR  
EAR  
EAS  
Maximum Power Dissipation  
357  
18  
50  
Avalanche current (repetitive and non repetitive)  
Repetitive Avalanche Energy  
Single Pulse Avalanche Energy  
A
mJ  
2500  
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note  
APT0502 on www.microsemi.com  
1 – 9  
www.microsemi.com  
1234567...9

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