Datasheet > APTM100H35FTG-Module

APTM100H35FTG-Module

更新时间： 2024-11-25 14:55:39

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
7页	559K
描述
FREDFETsLow RDSonLow input and Miller capacitanceLow gate chargeFast intrinsic reverse diodeAvalan

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APTM100H35FTG-Module 数据手册

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APTM100H35FTG

V_DSS= 1000V

Full - Bridge

MOSFET Power Module

R_DSon= 350m typ @ Tj = 25°C

I_D= 22A @ Tc = 25°C

Application

VBUS



Welding converters

Switched Mode Power Supplies

Uninterruptible Power Supplies

Motor control

OUT1

OUT2

Features



Power MOS 7^®FREDFETs

Low R_DSon

Low input and Miller capacitance

Low gate charge

Fast intrinsic reverse diode

Avalanche energy rated

Very rugged

NTC1

0/VBUS

NTC2



Kelvin source for easy drive

Very low stray inductance

Symmetrical design

Lead frames for power connections



Internal thermistor for temperature monitoring

High level of integration

Benefits



Outstanding performance at high frequency operation

Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

Solderable terminals both for power and signal for

easy PCB mounting



Low profile

RoHS Compliant

Absolute maximum ratings

Symbol

Parameter

Max ratings

Unit

V_DSS

Drain - Source Breakdown Voltage

1000

T_c= 25°C

T_c= 80°C

I_D

Continuous Drain Current

I_DM

V_GS

R_DSon

Pulsed Drain current

Gate - Source Voltage

Drain - Source ON Resistance

±30

420

390

m

P_D

I_AR

E_AR

E_AS

Maximum Power Dissipation

T_c= 25°C

Avalanche current (repetitive and non repetitive)

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

3000

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

1 –

www.microsemi.com

12 3 4 5 6 7

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