Datasheet > AOD200

AOD200

更新时间： 2024-11-06 12:51:27

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
6页	305K
描述
30V N-Channel MOSFET

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AOD200 数据手册

AOD200

30V N-Channel MOSFET

General Description

The AOD200 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high

frequency switching performance.Power losses are

minimized due to an extremely low combination of

controlled with a "Schottky style" soft recovery body diode.

RDS(ON) and Crss.In addition,switching behavior is well

Features

V_DS

30V

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

36A

< 7.8mΩ

< 11mΩ

_DS(ON)(at V_GS= 4.5V)

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

±20

V_GS

T_C=25°C

Continuous Drain

Current ^G

Pulsed Drain Current ^C

I_D

T_C=100°C

I_DM

120

T_A=25°C

T_A=70°C

Continuous Drain

Current

Avalanche Current ^C

Avalanche energy L=0.1mH ^C

I_DSM

I_AS, I_AR

E_AS, E_AR

T_C=25°C

Power Dissipation ^B

T_C=100°C

P_D

T_A=25°C

2.5

P_DSM

°C

Power Dissipation ^A

1.6

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 175

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

≤ 10s

R_θJA

Steady-State

R_θJC

2.1

1/6

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