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AOD256 PDF预览

AOD256

更新时间: 2024-11-09 12:51:35
品牌 Logo 应用领域
美国万代 - AOS /
页数 文件大小 规格书
6页 308K
描述
150V N-Channel MOSFET

AOD256 数据手册

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AOD256  
150V N-Channel MOSFET  
General Description  
Product Summary  
VDS  
150V  
The AOD256 uses trench MOSFET technology that is  
uniquely optimized to provide the most efficient high  
frequency switching performance. Both conduction and  
switching power losses are minimized due to an  
extremely low combination of RDS(ON), Ciss and Coss.  
This device is ideal for boost converters and synchronous  
rectifiers for consumer, telecom, industrial power supplies  
and LED backlighting.  
ID (at VGS=10V)  
RDS(ON) (at VGS=10V)  
RDS(ON) (at VGS=4.5V)  
19A  
< 85m  
< 100mΩ  
100% UIS Tested  
100% Rg Tested  
TO252  
DPAK  
D
Top View  
Bottom View  
D
D
G
S
G
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
VDS  
Maximum  
150  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
VGS  
±20  
TC=25°C  
19  
Continuous Drain  
Current  
ID  
TC=100°C  
13.5  
A
Pulsed Drain Current C  
IDM  
35  
TA=25°C  
TA=70°C  
3
Continuous Drain  
Current  
IDSM  
A
2.5  
Avalanche Current C  
IAS  
9
4
A
Avalanche energy L=0.1mH C  
EAS  
mJ  
TC=25°C  
Power Dissipation B  
TC=100°C  
83  
PD  
W
41.5  
2.5  
TA=25°C  
PDSM  
W
°C  
Power Dissipation A  
1.6  
TA=70°C  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 175  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
16  
Max  
20  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A D  
Maximum Junction-to-Case  
t
10s  
RθJA  
Steady-State  
Steady-State  
41  
50  
RθJC  
1.5  
1.8  
Rev 0: July 2012  
www.aosmd.com  
Page 1 of 6  

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