Datasheet > AOD2908

AOD2908

更新时间： 2024-11-20 12:24:51

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	272K
描述
100V N-Channel MOSFET

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AOD2908 数据手册

AOD2908

100V N-Channel MOSFET

General Description

Product Summary

V_DS

The AOD2908 uses Trench MOSFET technology that is

uniquely optimized to provide the most efficient high

frequency switching performance. Both conduction and

switching power losses are minimized due to an extremely

low combination of R_DS(ON), Ciss and Coss. This device is

ideal for boost converters and synchronous rectifiers for

consumer, telecom, industrial power supplies and LED

backlighting.

100V

52A

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

< 13.5mΩ

100% UIS Tested

100% R_gTested

TO252

DPAK

TopView

Bottom View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

100

±20

Gate-Source Voltage

V_GS

T_C=25°C

Continuous Drain

Current

Pulsed Drain Current ^I

Pulsed Drain Current ^J

I_D

T_C=100°C

I_DM

120

150

T_A=25°C

T_A=70°C

Continuous Drain

Current

I_DSM

Avalanche Current ^C

I_AS

Avalanche energy L=0.1mH ^C

E_AS

T_C=25°C

Power Dissipation ^B

T_C=100°C

P_D

T_A=25°C

2.5

P_DSM

°C

Power Dissipation ^A

1.6

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 175

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

≤ 10s

R_θJA

Steady-State

R_θJC

1.5

Rev 1 : Mar. 2012

www.aosmd.com

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