Datasheet > AOD210

AOD210

更新时间： 2024-11-18 17:15:35

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
6页	436K
描述
种类:N-Channel;漏源电压（Vdss）:30V;持续漏极电流（Id）（在25°C时）:70A;Vgs(th)(V):±20;漏源导通电阻:3mΩ@10V;漏源导通电阻:3.9mΩ@4.5V

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AOD210 数据手册

AOD210

UMW

30V N-Channel MOSFET

General Description

The AOD210 uses Trench MOSFET technology that

is uniquely optimized to provide the most efficient high

frequency switching performance. Power losses are

minimized due to an extremely low combination of

R_DS(ON)

and C_rss

Product Summary

•

30V

I (at V =10V) = 70A

(at V =10V) = < 3mΩ

•

DS(ON)

(at V = 4.5V) = < 3.9mΩ

Absolute Maximum Ratings T =25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

V_GS

I_D

I_DM

I_DSM

Gate-Source Voltage

Continuous Drain

Current ^G

±20

T_C=25°C

T_C=100°C

Pulsed Drain Current ^C

390

T_A=25°C

T_A=70°C

Continuous Drain

Current

Avalanche Current ^C

Avalanche energy L=0.1mH ^C

I_AS, I_AR

E_AS, E_AR

231

150

T_C=25°C

P_D

Power Dissipation ^B

Power Dissipation ^A

T_C=100°C

T_A=25°C

T_A=70°C

2.7

P_DSM

1.7

T_J, T_STG

Junction and Storage Temperature Range

-55 to 175

°C

Thermal Characteristics

Parameter

Symbol

Typ

14.2

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

t ≤ 10s

R_θJA

Steady-State

R_θJC

0.8

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6

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