Datasheet > AOD2922

AOD2922

更新时间： 2024-09-16 17:15:23

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
6页	509K
描述
种类:N-Channel;漏源电压（Vdss）:100V;持续漏极电流（Id）（在25°C时）:7A;Vgs(th)(V):±20;漏源导通电阻:140mΩ@10V

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

AOD2922 数据手册

AOD2922

UMW

100V N-Channel MOSFET

General Description

• Very Low R_DS(ON)

• Low Gate Charge

• Optimized for fast-switching applications

Application

• Synchronus Rectification in DC/DC and AC/DC Converters

• Isolated DC/DC Converters in Telecom and Industrial

•

V_DS(V) = 100V

I_D= 7A (V_GS= 10V)

R_DS(ON)< 140mΩ (V _GS= 10V)

R_DS(ON)< 176mΩ (V _GS= 4.5V)

•

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

V_DS

100

V_GS

±20

T_C=25°C

Continuous Drain

Current

Pulsed Drain Current ^C

I_D

T_C=100°C

I_DM

T_A=25°C

T_A=70°C

3.5

Continuous Drain

Current

I_DSM

Avalanche Current ^C

I_AS

Avalanche energy L=0.1mH ^C

E_AS

0.5

V_DSSpike

10us

V_SPIKE

120

T_C=25°C

T_C=100°C

T_A=25°C

T_A=70°C

P_D

Power Dissipation ^B

8.5

5.0

P_DSM

°C

Power Dissipation ^A

3.2

Junction and Storage Temperature Range

T_J, T_STG

-55 to 175

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

≤ 10s

R_θJA

Steady-State

R_θJC

7.3

8.8

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6

中文翻译

下载PDF

与AOD2922相关器件

型号	品牌	获取价格	描述	数据表
AOD2HC60	AOS	获取价格	600V,2.5A N-Channel MOSFET
AOD2N100	AOS	获取价格	1000V,2A N-Channel MOSFET
AOD2N60	AOS	获取价格	2A, 600V N-Channel MOSFET
AOD2N60_10	AOS	获取价格	600V, 2A N-Channel MOSFET
AOD2N60A	AOS	获取价格	600V,2A N-Channel MOSFET
AOD3422	AOS	获取价格	N-Channel Enhancement Mode Field Effect Transistor
AOD3C60	AOS	获取价格	600V,3A N-Channel MOSFET
AOD3N40	AOS	获取价格	400V,2.6A N-Channel MOSFET
AOD3N40	FREESCALE	获取价格	400V,2.6A N-Channel MOSFET
AOD3N40_13	AOS	获取价格	400V,2.6A N-Channel MOSFET