Datasheet > AOD208

AOD208

更新时间： 2024-11-06 12:24:23

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飞思卡尔 - FREESCALE		/
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6页	485K
描述
30V N-Channel MOSFET

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AOD208 数据手册

AOD208

30V N-Channel MOSFET

General Description

The AOD208 uses Trench MOSFET technology that

is uniquely optimized to provide the most efficient high

minimized due to an extremely low combination of

frequency switching performance. Power losses are

RDS(ON) and Crss.In addition, switching behavior is well

diode.

controlled with a “Schottky style” soft recovery body

Features

V_DS

30V

54A

I_D(at V_GS=10V)

< 4.4mΩ

< 6.5mΩ

_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS= 4.5V)

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

V_GS

I_D

I_DM

I_DSM

Gate-Source Voltage

Continuous Drain

Current ^G

±20

T_C=25°C

T_C=100°C

Pulsed Drain Current ^C

200

T_A=25°C

T_A=70°C

Continuous Drain

Current

Avalanche Current ^C

Avalanche energy L=0.1mH ^C

I_AS, I_AR

E_AS, E_AR

T_C=25°C

P_D

Power Dissipation ^B

Power Dissipation ^A

T_C=100°C

T_A=25°C

T_A=70°C

2.5

P_DSM

1.6

T_J, T_STG

Junction and Storage Temperature Range

-55 to 175

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

Steady-State

R_θJC

2.4

1/6

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