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AOD2HC60 PDF预览

AOD2HC60

更新时间: 2024-11-18 12:54:07
品牌 Logo 应用领域
美国万代 - AOS /
页数 文件大小 规格书
6页 2529K
描述
600V,2.5A N-Channel MOSFET

AOD2HC60 数据手册

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万和兴电子有限公司 www.whxpcb.com  
AOD2HC60  
600V,2.5A N-Channel MOSFET  
General Description  
Product Summary  
VDS @ Tj,max  
IDM  
700  
The AOD2HC60 is fabricated using an advanced high  
voltage MOSFET process that is designed to deliver high  
levels of performance and robustness in popular AC-DC  
applications. By providing low RDS(on), Ciss and Crss along  
with guaranteed avalanche capability this part can be  
adopted quickly into new and existing offline power supply  
designs.  
14A  
RDS(ON),max  
Qg,typ  
< 2  
7.6nC  
1.6µC  
Eoss @ 400V  
100% UIS Tested!  
100% Rg Tested!  
TO252  
DPAK  
D
Top View  
Bottom View  
D
D
G
G
S
S
S
G
AOD2HC60  
Absolute Maximum Ratings 
Parameter  
mum  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
600  
±30  
2.5  
2
V
V
Continuous Drain  
CurrentB  
A
Pulsed Drain Current C  
14  
7.5  
28  
Avalanche Current C  
A
Repetitive avalanche energy C  
mJ  
mJ  
Single pulsed avalanche energy H  
MOSFET dv/dt ruggedness  
Peak diode recovery dv/dt  
TC=25°C  
132  
100  
20  
dv/dt  
V/ns  
W
74  
0.6  
PD  
Power Dissipation B  
Derate above 25oC  
W/ oC  
°C  
Junction and Storage Temperature Range  
TJ, TSTG  
-50 to 150  
Maximum lead temperature for soldering  
purpose, 1/8" from case for 5 seconds  
TL  
300  
°C  
Thermal Characteristics  
Parameter  
Symbol  
RθJA  
Typical  
Maximum  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A,G  
45  
-
55  
0.5  
1.7  
Maximum Case-to-sink A  
Maximum Junction-to-CaseD,F  
RθCS  
RθJC  
1.3  
Rev.1.0 April 2013  
www.aosmd.com  
Page 1 of 6  

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