Datasheet > AOD2210

AOD2210

更新时间： 2024-11-06 12:51:35

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	2578K
描述
200V N-Channel MOSFET

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AOD2210 数据手册

万和兴电子有限公司 www.whxpcb.com

AOD2210

200V N-Channel MOSFET

General Description

Product Summary

V_DS

200V

The AOD2210 uses trench MOSFET technology that is

uniquely optimized to provide the most efficient high

frequency switching performance. Both conduction and

switching power losses are minimized due to an

extremely low combination of R_DS(ON), Ciss and Coss.

This device is ideal for boost converters and synchronous

rectifiers for consumer, telecom, industrial power supplies

and LED backlighting.

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS=5V)

18A

< 105mΩ

< 120mΩ

100% UIS Tested

100% R_gTested

TO252

DPAK

Top View

Bottom View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

200

±20

V_GS

T_C=25°C

Continuous Drain

Current

Pulsed Drain Current ^C

I_D

T_C=100°C

I_DM

T_A=25°C

T_A=70°C

3.0

Continuous Drain

Current

Avalanche Current ^C

Avalanche energy L=0.1mH ^C

I_DSM

2.5

I_AS

E_AS

T_C=25°C

Power Dissipation ^B

T_C=100°C

100

P_D

T_A=25°C

2.5

P_DSM

°C

Power Dissipation ^A

1.6

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 175

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

≤ 10s

R_θJA

Steady-State

R_θJC

1.5

Prelim: Sep. 2012

www.aosmd.com

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