Datasheet > AOD2908

AOD2908

更新时间： 2024-11-20 12:51:27

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飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
6页	309K
描述
100V N-Channel MOSFET

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AOD2908 数据手册

AOD2908

100V N-Channel MOSFET

General Description

uniquely optimized to provide the most efficient high

The AOD2908 uses Trench MOSFET technology that is

frequency switching performance. Both conduction and switching power losses are minimized due to an extremely

low combination of R_DS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for

backlighting.

consumer, telecom, industrial power supplies and LED

Features

V_DS

100V

52A

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

< 13.5mΩ

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

100

Gate-Source Voltage

V_GS

±20

T_C=25°C

Continuous Drain

Current

I_D

T_C=100°C

Pulsed Drain Current ^I

Pulsed Drain Current ^J

I_DM

120

150

T_A=25°C

T_A=70°C

Continuous Drain

Current

Avalanche Current ^C

I_DSM

I_AS

Avalanche energy L=0.1mH ^C

E_AS

T_C=25°C

Power Dissipation ^B

T_C=100°C

P_D

T_A=25°C

2.5

P_DSM

°C

Power Dissipation ^A

1.6

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 175

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

≤ 10s

R_θJA

Steady-State

R_θJC

1.5

1/6

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