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AOD254 PDF预览

AOD254

更新时间: 2024-09-15 12:24:51
品牌 Logo 应用领域
美国万代 - AOS /
页数 文件大小 规格书
6页 307K
描述
150V N-Channel MOSFET

AOD254 数据手册

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AOD254  
150V N-Channel MOSFET  
General Description  
Product Summary  
VDS  
150V  
The AOD254 uses trench MOSFET technology that is  
uniquely optimized to provide the most efficient high  
frequency switching performance.Power losses are  
minimized due to an extremely low combination of  
RDS(ON) and Crss.In addition,switching behavior is well  
controlled with a soft recovery body diode.This device is  
ideal for boost converters and synchronous rectifiers for  
consumer, telecom, industrial power supplies and LED  
backlighting.  
ID (at VGS=10V)  
RDS(ON) (at VGS=10V)  
RDS(ON) (at VGS =4.5V)  
28A  
< 46m  
< 53mΩ  
100% UIS Tested  
100% Rg Tested  
TO252  
DPAK  
D
Top View  
Bottom View  
D
D
G
S
G
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
VDS  
Maximum  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
150  
±20  
28  
V
V
VGS  
TC=25°C  
Continuous Drain  
Current  
Pulsed Drain Current C  
ID  
TC=100°C  
20  
A
A
IDM  
45  
4.5  
TA=25°C  
TA=70°C  
Continuous Drain  
Current  
Avalanche Current C  
Avalanche energy L=0.1mH C  
IDSM  
3.6  
IAS  
12  
A
EAS  
7
mJ  
TC=25°C  
Power Dissipation B  
TC=100°C  
100  
50  
PD  
W
TA=25°C  
2.5  
PDSM  
W
°C  
Power Dissipation A  
1.6  
TA=70°C  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 175  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
15  
41  
1
Max  
20  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A D  
Maximum Junction-to-Case  
t
10s  
RθJA  
Steady-State  
Steady-State  
50  
RθJC  
1.5  
Rev 0 : Dec. 2011  
www.aosmd.com  
Page 1 of 6  

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