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AO3400

更新时间: 2024-11-19 08:30:59
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管
页数 文件大小 规格书
4页 108K
描述
N-Channel Enhancement Mode Field Effect Transistor

AO3400 数据手册

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AO3400  
N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AO3400 uses advanced trench technology to  
provide excellent RDS(ON), low gate charge and  
operation with gate voltages as low as 2.5V. This  
device is suitable for use as a load switch or in PWM  
applications. Standard Product AO3400 is Pb-free  
(meets ROHS & Sony 259 specifications). AO3400L  
is a Green Product ordering option. AO3400 and  
AO3400L are electrically identical.  
VDS (V) = 30V  
ID = 5.8 A (VGS = 10V)  
RDS(ON) < 28m(VGS = 10V)  
RDS(ON) < 33m(VGS = 4.5V)  
RDS(ON) < 52m(VGS = 2.5V)  
TO-236  
(SOT-23)  
Top View  
D
S
G
D
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
Continuous Drain  
Current A  
30  
±12  
V
V
VGS  
TA=25°C  
TA=70°C  
5.8  
ID  
4.9  
A
Pulsed Drain Current B  
IDM  
30  
TA=25°C  
TA=70°C  
1.4  
PD  
W
Power Dissipation A  
1
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150  
°C  
Thermal Characteristics  
Parameter  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
Symbol  
Typ  
65  
85  
Max  
90  
125  
60  
Units  
°C/W  
°C/W  
°C/W  
t 10s  
Steady-State  
Steady-State  
RθJA  
RθJL  
43  
Alpha & Omega Semiconductor, Ltd.  

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