Datasheet > AO3162

AO3162

更新时间： 2024-11-05 12:51:15

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
5页	275K
描述
600V,0.034A N-Channel MOSFET

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AO3162 数据手册

AO3162

600V,0.034A N-Channel MOSFET

General Description

tage

MOSFET process that is designed to deliver high levels

The AO3162 is fabricated using an advanced high vol

applications. By providing low R_DS(on)

of performance and robustness in popular AC-DC

guaranteed avalanche capability this device can be

designs.

, C_issand C_rssalong with

supply

adopted quickly into new and existing offline power

Features

V_DS

700V@150℃

I_D(at V_GS=10V)

0.034A

R_DS(ON)(at V_GS=10V)

< 500Ω

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

600

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

±30

T_A=25°C

T_A=70°C

0.034

0.028

Continuous Drain

Current^A,F

I_D

Pulsed Drain Current ^B

I_DM

0.16

Peak diode recovery dv/dt

T_A=25°C

T_A=70°C

dv/dt

V/ns

1.39

P_D

Power Dissipation ^A

0.89

Junction and Storage Temperature Range

T_J, T_STG

-50 to 150

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

≤ 10s

R_θJA

Steady-State

100

125

R_θJL

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