Datasheet > AO3400

AO3400

更新时间： 2024-11-06 18:09:27

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
6页	696K
描述
SOT-23

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中文翻译

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数据手册

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AO3400 数据手册

AO3400

LOW VOLTAGE MOSFET (N-CHANNEL)

FEATURES

 Ultra low on-resistance:V_DS=30V,R_DS(ON)≤28mΩ@V_GS=10V,I_D=5.6A

 For PWM application

 For Load switch application

 Surface Mount device

SOT-23

MECHANICAL DATA



Case: SOT-23

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0



Weight: 0.008 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Drain-source voltage

Symbol

V_DS

V_GS

I_D

Value

±12

5.6

4.9

Unit

Gate-source voltage

TA=25°C

TA=70°C

Continuous drain current

I_D

Pulsed drain current

IDM

TA=25°C

P_D

1.40

0.9

125

°C/W

°C

Power dissipation

TA=70°C

Thermal resistance from Junction to ambient

Junction temperature

R_θJA

150

-55 ~+150

Storage temperature

TSTG

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol Min Typ Max Unit

Conditions

VGS=0V, ID=250μA

V(BR)DSS

Drain-Source breakdown voltage

Zero gate voltage drain current

Gate-body leakage current

Gate-threshold voltage

I_DSS

I_GSS

uA V_DS=30V,

V^GS=0V

±100 nA

V_DS=0V,

V^GS=±12V

V_GS(th)

0.6

0.9

1.5

mΩ

V =V , I =250μA

VGS=10V, ID=5.6A

VGS=4.5V, ID=5A

Drain-source on-resistance

R_DS(ON)

V =2.5V, I =4A

I_D(ON)

g_FS

R_g

On-State Drain Current

Forward transconductance

Gate resistance

V_DS=5V,

VGS=4.5V

VDS=5V, ID=5.6A

VGS=0V, VDS=0V, f=1MHz

1.5

4.5

C_iss

C_oss

C_rss

t_d(on)

t_r

t_d(off)

t_f

Q_g

Q_gs

Q_gd

V_SD

I_S

t_rr

Q_rr

630

2.5

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Turn-on rise time

Turn-off delay time

Turn-off fall time

Total gate charge

Gate-source charge

V_{DS=15V, VGS=0V, f=1MHz}

nS VDS=15V, VGS=10V,

RGEN=3Ω, RL=2.6Ω

VDS=15V,VGS=4.5V,ID=5.6A

1.3

1.8

0.7

Gate-drain charge

Diode forward voltage

Diode forward current

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

IS=1A, VGS=0V

8.5

2.6

nS IF=5.6A, dI/dt=100A/ms

nC IF=5.6A, dI/dt=100A/ms

* Pulse test ; Pulse width ≤300µs, Duty cycle ≤ 0.5% .

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