Datasheet > AO3160

AO3160

更新时间： 2024-02-02 09:32:54

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
5页	311K
描述
600V,0.04A N-Channel MOSFET

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AO3160 数据手册

AO3160

600V,0.04A N-Channel MOSFET

General Description

The AO3160 is fabricated using an advanced high vol

tage

MOSFET process that is designed to deliver high levels

applications.

By providing low R

of performance and robustness in popular AC-DC

_DS(on), C_issand C_rssalong with

guaranteed avalanche capability this device can be

adopted quickly into new and existing offline powersupply

designs.

Features

V_DS

700V@150℃

0.04A

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS=4.5V)

< 500Ω

< 600Ω

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

600

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

T_A=25°C

T_A=70°C

0.04

Continuous Drain

Current^A,F

I_D

0.03

Pulsed Drain Current ^B

I_DM

0.12

Peak diode recovery dv/dt

T_A=25°C

T_A=70°C

dv/dt

V/ns

1.39

P_D

Power Dissipation ^A

0.89

Junction and Storage Temperature Range

T_J, T_STG

-50 to 150

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

≤ 10s

R_θJA

Steady-State

100

125

R_θJL

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