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AO3160 PDF预览

AO3160

更新时间: 2024-11-05 12:23:51
品牌 Logo 应用领域
飞思卡尔 - FREESCALE /
页数 文件大小 规格书
5页 311K
描述
600V,0.04A N-Channel MOSFET

AO3160 数据手册

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AO3160  
600V,0.04A N-Channel MOSFET  
General Description  
The AO3160 is fabricated using an advanced high vol  
tage  
MOSFET process that is designed to deliver high levels  
applications.  
By providing low R  
of performance and robustness in popular AC-DC  
DS(on) , Ciss and Crss along with  
guaranteed avalanche capability this device can be  
adopted quickly into new and existing offline powersupply  
designs.  
Features  
VDS  
700V@150  
0.04A  
ID (at VGS=10V)  
RDS(ON) (at VGS=10V)  
RDS(ON) (at VGS=4.5V)  
< 500  
< 600Ω  
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
VDS  
Maximum  
600  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
VGS  
±20  
TA=25°C  
TA=70°C  
0.04  
Continuous Drain  
CurrentA,F  
ID  
0.03  
A
Pulsed Drain Current B  
IDM  
0.12  
5
Peak diode recovery dv/dt  
TA=25°C  
TA=70°C  
dv/dt  
V/ns  
W
1.39  
PD  
Power Dissipation A  
0.89  
Junction and Storage Temperature Range  
TJ, TSTG  
-50 to 150  
°C  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
70  
Max  
90  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
t
10s  
RθJA  
Steady-State  
Steady-State  
100  
63  
125  
80  
RθJL  
1 / 5  
www.freescale.net.cn  

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