Datasheet > AO3162

AO3162

更新时间： 2024-11-05 12:51:27

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
5页	262K
描述
600V,0.034A N-Channel MOSFET

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AO3162 数据手册

AO3162

600V,0.034A N-Channel MOSFET

General Description

Product Summary

The AO3162 is fabricated using an advanced high voltage

MOSFET process that is designed to deliver high levels

of performance and robustness in popular AC-DC

applications.

By providing low R_DS(on), C_issand C_rssalong with

guaranteed avalanche capability this device can be

adopted quickly into new and existing offline power supply

designs.

V_DS

700V@150℃

0.034A

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

< 500Ω

SOT23A

Top View

Bottom View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

600

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

±30

T_A=25°C

T_A=70°C

0.034

0.028

Continuous Drain

Current^A,F

I_D

Pulsed Drain Current ^B

I_DM

0.16

Peak diode recovery dv/dt

T_A=25°C

T_A=70°C

dv/dt

V/ns

1.39

P_D

Power Dissipation ^A

0.89

Junction and Storage Temperature Range

T_J, T_STG

-50 to 150

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

≤ 10s

125

R_θJA

Steady-State

100

R_θJL

Rev0: May 2012

www.aosmd.com

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