Datasheet > 3SK229

3SK229

更新时间： 2024-09-16 23:21:11

品牌	Logo	应用领域
其他 - ETC		晶体晶体管光电二极管放大器
页数	文件大小	规格书
2页	16K
描述

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

3SK229 数据手册

3SK229

GaAs Dual Gate MES FET

UHF TV Tuner RF Amplifier

Table 1 Absolute Maximum Ratings

(Ta = 25°C)

MPAK-4

Item

——————————————————————–

Drain to source voltage 12

——————————————————————–

Gate 1 to source voltage –6

——————————————————————–

Gate 2 to source voltage –6

——————————————————————–

Drain current 50 mA

——————————————————————–

Channel power dissipation Pch 150 mW

——————————————————————–

Channel temperature Tch 125 °C

——————————————————————–

Storage temperature Tstg –55 to +125 °C

Symbol Rating

Unit

G1S

G2S

1. Source

2. Gate 1

3. Gate 2

4. Drain

——————————————————————–

Table 2 Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min Typ Max Unit Test condition

———————————————————————————————————————————————–

Drain to source cutoff current

—

µA

= 12 V,

DSX

= –4 V, V

= 0

G2S

G1S

———————————————————————————————————————————————–

Gate 1 to source breakdown voltage –6 = –10 µA,

—

(BR)G1SS

= V

= 0

G2S

———————————————————————————————————————————————–

Gate 2 to source breakdown voltage –6 = –10 µA,

—

(BR)G2SS

= V

= 0

G1S

———————————————————————————————————————————————–

Gate 1 cutoff current

—

–5

µA

= –5 V,

G1SS

G1S

G2S

= V

= 0

———————————————————————————————————————————————–

Gate 2 cutoff current

—

–5

µA

= –5 V,

G2SS

G2S

G1S

= V

= 0

———————————————————————————————————————————————–

Drain current

= 5 V,

DSS

= V

= 0

G1S

G2S

———————————————————————————————————————————————–

Gate 1 to source cutoff voltage –1.3 –3.5 = 5 V, V = 0,

—

G1S(off)

G2S

= 100 µA

———————————————————————————————————————————————–

Gate 2 to source cutoff voltage –1.3 –3.5 = 5 V, V = 0,

—

G2S(off)

G1S

= 100 µA

———————————————————————————————————————————————–

中文翻译

下载PDF

与3SK229相关器件

型号	品牌	获取价格	描述	数据表
3SK229XS-TL	RENESAS	获取价格	80mA, 12V, N-CHANNEL, GaAs, SMALL SIGNAL, MOSFET
3SK229XS-TR	RENESAS	获取价格	80mA, 12V, N-CHANNEL, GaAs, SMALL SIGNAL, MOSFET
3SK229XS-UL	RENESAS	获取价格	Small Signal Field-Effect Transistor, 0.08A I(D), 12V, 1-Element, N-Channel, Gallium Arsen
3SK229XS-UR	RENESAS	获取价格	Small Signal Field-Effect Transistor, 0.08A I(D), 12V, 1-Element, N-Channel, Gallium Arsen
3SK230-A	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C
3SK230-U1A	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C
3SK230-U1A-A	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C
3SK230-U1B	RENESAS	获取价格	VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, PLASTIC, SC-61, 4 PIN
3SK230-U1B	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C
3SK230-U1B-A	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C

与3SK229相关文章

摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
2024-09-18

18
贸泽上架Tallysman TW5386智能GNSS天线
2024-09-18

16
SL74HC10N：高性能三输入与非门解析
2024-09-03

93
AIC1781A 电池充电控制器深度解析
2024-09-03

83

产品中心

服务支持

精选活动

关于我们

帮助中心

3SK229

3SK229 数据手册

与3SK229相关器件

与3SK229相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

3SK229

3SK229 数据手册

与3SK229相关器件

与3SK229相关文章

您还可以找

您在本页遇到什么问题？