Datasheet > 3SK224-U95

3SK224-U95

更新时间： 2024-09-17 15:25:59

品牌	Logo	应用领域
日电电子 - NEC		放大器光电二极管晶体管
页数	文件大小	规格书
6页	47K
描述
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, MINIMOLD PACKAGE-4

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中文翻译

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技术参数
数据手册

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3SK224-U95 技术参数

生命周期：	Obsolete	包装说明：	MINIMOLD PACKAGE-4
Reach Compliance Code：	unknown	风险等级：	5.65
配置：	SINGLE	最大漏极电流 (ID)：	0.025 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	最大反馈电容 (Crss)：	0.025 pF
最高频带：	ULTRA HIGH FREQUENCY BAND	JESD-30 代码：	R-PDSO-G4
元件数量：	1	端子数量：	4
工作模式：	DUAL GATE, DEPLETION MODE	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	N-CHANNEL	最小功率增益 (Gp)：	15 dB
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	GULL WING	端子位置：	DUAL
晶体管应用：	AMPLIFIER	晶体管元件材料：	SILICON
Base Number Matches：	1

3SK224-U95 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

3SK224

RF AMPLIFIER FOR UHF TV TUNER

N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR

4 PINS MINI MOLD

FEATURES

PACKAGE DIMENSIONS

•

Low Noise Figure:

High Power Gain:

NF = 1.8 dB TYP. (f = 900 MHz)

G^PS= 17 dB TYP. (f = 900 MHz)

(Unit: mm)

+0.2

2.8

–0.1

Suitable for use as RF amplifier in UHF TV tuner.

+0.2

1.5

–0.1

Automatically Mounting:

Small Package:

Embossed Type Taping

4 Pins Mini Mold

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

Drain to Source Voltage

Gate1 to Source Voltage

Gate2 to Source Voltage

Gate1 to Drain Voltage

Gate2 to Drain Voltage

Drain Current

VDSX

V^G1S

V^G2S

VG1D

V^G2D

I^D

±8 (±10)^*1

5°

°C

Total Power Dissipation

Channel Temperature

Storage Temperature

*1 RL ≥ 10 kΩ

200

T^ch

125

1. Source

2. Drain

3. Gate 2

4. Gate 1

T^stg

–55 to +125

Document No. P10576EJ2V0DS00 (2nd edition)

(Previous No. TD-2265)

Date Published August 1995 P

Printed in Japan

1989

1993

12 3 4 5 6

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