5秒后页面跳转
3SK225TE85R PDF预览

3SK225TE85R

更新时间: 2024-11-07 20:05:23
品牌 Logo 应用领域
东芝 - TOSHIBA 放大器光电二极管晶体管
页数 文件大小 规格书
4页 110K
描述
TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal

3SK225TE85R 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.78
外壳连接:SOURCE配置:SINGLE
最小漏源击穿电压:13.5 V最大漏极电流 (ID):0.03 A
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):0.05 pF
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:R-PDSO-G4
JESD-609代码:e0元件数量:1
端子数量:4工作模式:DUAL GATE, DEPLETION MODE
最高工作温度:125 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):240极性/信道类型:N-CHANNEL
最小功率增益 (Gp):19 dB认证状态:Not Qualified
表面贴装:YES端子面层:TIN LEAD
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

3SK225TE85R 数据手册

 浏览型号3SK225TE85R的Datasheet PDF文件第2页浏览型号3SK225TE85R的Datasheet PDF文件第3页浏览型号3SK225TE85R的Datasheet PDF文件第4页 

与3SK225TE85R相关器件

型号 品牌 获取价格 描述 数据表
3SK226 TOSHIBA

获取价格

N CHANNEL DUAL GATE MOS TYPE (TV TUNER, VHF RF AMPLIFIER , FM TUNER APPLICATIONS)
3SK226_07 TOSHIBA

获取价格

Silicon N Channel Dual Gate MOS Type TV Tuner, VHF RF Amplifier Applications
3SK226TE85L TOSHIBA

获取价格

TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal
3SK226TE85R TOSHIBA

获取价格

TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal
3SK227 PANASONIC

获取价格

RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Metal-oxide Semico
3SK227H PANASONIC

获取价格

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-
3SK228 ETC

获取价格

3SK228XR-TL RENESAS

获取价格

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Ars
3SK228XR-TR RENESAS

获取价格

UHF BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET, MPAK-4
3SK228XR-UL RENESAS

获取价格

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Ars