生命周期: | Transferred | 零件包装代码: | TO-220AB |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | HTS代码: | 8541.29.00.95 |
风险等级: | 5.38 | Is Samacsys: | N |
其他特性: | HIGH RELIABILITY | 雪崩能效等级(Eas): | 306 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 450 V |
最大漏极电流 (Abs) (ID): | 15.5 A | 最大漏极电流 (ID): | 15.5 A |
最大漏源导通电阻: | 0.42 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 37 W | 最大脉冲漏极电流 (IDM): | 54 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK4123LS | SANYO |
获取价格 |
N-Channel Silicon MOSFET General-Purpose Switching Device | |
2SK4124 | SANYO |
获取价格 |
N-Channel Silicon MOSFET General-Purpose Switching Device | |
2SK4124_0712 | SANYO |
获取价格 |
General-Purpose Switching Device Applications | |
2SK4124_12 | SANYO |
获取价格 |
General-Purpose Switching Device Applications | |
2SK4125 | SANYO |
获取价格 |
N-Channel Silicon MOSFET General-Purpose Switching Device | |
2SK4125 | ONSEMI |
获取价格 |
17A, 600V, 0.61ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PB, 3 PIN | |
2SK4125_0712 | SANYO |
获取价格 |
General-Purpose Switching Device Applications | |
2SK4125_12 | SANYO |
获取价格 |
General-Purpose Switching Device Applications | |
2SK4125-1E | ONSEMI |
获取价格 |
N-Channel Power MOSFET, 600V, 17A, 610mΩ, TO-3P-3L, TO-3P-3L, 30-TUBE | |
2SK4126 | SANYO |
获取价格 |
N-Channel Silicon MOSFET General-Purpose Switching Device |