生命周期: | Obsolete | 零件包装代码: | TO-3PB |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | HTS代码: | 8541.29.00.95 |
风险等级: | 5.74 | Is Samacsys: | N |
其他特性: | HIGH RELIABILITY | 雪崩能效等级(Eas): | 124 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 500 V |
最大漏极电流 (Abs) (ID): | 20 A | 最大漏极电流 (ID): | 20 A |
最大漏源导通电阻: | 0.43 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 170 W |
最大脉冲漏极电流 (IDM): | 60 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK4124_0712 | SANYO |
获取价格 |
General-Purpose Switching Device Applications | |
2SK4124_12 | SANYO |
获取价格 |
General-Purpose Switching Device Applications | |
2SK4125 | SANYO |
获取价格 |
N-Channel Silicon MOSFET General-Purpose Switching Device | |
2SK4125 | ONSEMI |
获取价格 |
17A, 600V, 0.61ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PB, 3 PIN | |
2SK4125_0712 | SANYO |
获取价格 |
General-Purpose Switching Device Applications | |
2SK4125_12 | SANYO |
获取价格 |
General-Purpose Switching Device Applications | |
2SK4125-1E | ONSEMI |
获取价格 |
N-Channel Power MOSFET, 600V, 17A, 610mΩ, TO-3P-3L, TO-3P-3L, 30-TUBE | |
2SK4126 | SANYO |
获取价格 |
N-Channel Silicon MOSFET General-Purpose Switching Device | |
2SK4126_0712 | SANYO |
获取价格 |
General-Purpose Switching Device Applications | |
2SK413 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 140V V(BR)DSS | 8A I(D) | TO-247VAR |