是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
Reach Compliance Code: | unknown | 风险等级: | 5.43 |
外壳连接: | DRAIN | 配置: | SINGLE |
最小漏源击穿电压: | 400 V | 最大漏极电流 (ID): | 10 A |
最大漏源导通电阻: | 0.6 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
功耗环境最大值: | 120 W | 认证状态: | Not Qualified |
表面贴装: | NO | 端子面层: | TIN LEAD |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK3850 | SANYO |
获取价格 |
General-Purpose Switching Device Applications | |
2SK3851 | ALLEGRO |
获取价格 |
Power Field-Effect Transistor, MT-100, TO-3P, 3 PIN | |
2SK3856 | SANYO |
获取价格 |
2SK3856 | |
2SK3856-5 | ONSEMI |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,15V V(BR)DSS,30MA I(D),SOT-23 | |
2SK3856-6 | ONSEMI |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,15V V(BR)DSS,30MA I(D),SOT-23 | |
2SK3857MFV | TOSHIBA |
获取价格 |
暂无描述 | |
2SK3857MFV-A | TOSHIBA |
获取价格 |
TRANSISTOR 0.37 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, 2-1L1C, 3 PIN, FET General Purpose | |
2SK3857MFV-B | TOSHIBA |
获取价格 |
TRANSISTOR 0.37 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, 2-1L1C, 3 PIN, FET General Purpose | |
2SK3857TK | TOSHIBA |
获取价格 |
Silicon N Channel Junction Type For ECM | |
2SK3857TK-A | TOSHIBA |
获取价格 |
TRANSISTOR 0.37 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, LEAD FREE, 2-1R1A, TESM3, 3 PIN, FE |