Datasheet > 2SK3862G-U

2SK3862G-U

更新时间： 2024-01-24 06:17:13

品牌	Logo	应用领域
松下 - PANASONIC		开关光电二极管晶体管
页数	文件大小	规格书
4页	407K
描述
Small Signal Field-Effect Transistor, 0.00047A I(D), 20V, 1-Element, N-Channel, Silicon, Junction FET, ROHS COMPLIANT, TSSSMINI3-F2, 3 PIN

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技术参数
数据手册

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2SK3862G-U 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	SMALL OUTLINE, R-PDSO-F3	针数：	3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.21.00.95	风险等级：	5.84
其他特性：	LOW NOISE	配置：	SINGLE
最小漏源击穿电压：	20 V	最大漏极电流 (ID)：	0.00047 A
FET 技术：	JUNCTION	JESD-30 代码：	R-PDSO-F3
元件数量：	1	端子数量：	3
工作模式：	DEPLETION MODE	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	N-CHANNEL
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	FLAT	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

2SK3862G-U 数据手册

This product complies with the RoHS Directive (EU 2002/95/EC).

Silicon Junction FETs (Small Signal)

2SK3862

Silicon N-channel junction FET

For impedance conversion in low frequency

For electret capacitor microphone

 Package

 Features

ꢀCode

 Low noise voltage NV

 High voltage gain GV

 Thin package: TSSSMini3-F1 (1.2 mm × 1.2 mm × 0.33 mm)

TSSSMini3-F1

ꢀPin Name

1: Drain

 Absolute Maximum Ratings T_a= 25°C

2: Source

3: Gate

Parameter

Drain-source voltage (Gate open)

Drain-gate voltage (Souece open)

Drain-source current (Gate open)

Drain-gate current (Souece open)

Power dissipation

Symbol

V_DSO

V_DGO

I_DSO

Rating

Unit

 Marking Symbol: 5D

°C

I_DGO

P_D

100

Operating ambient temperature

Storage temperature

T_opr

–20 to +80

–55 to +125

stg

°C

 Electrical Characteristics T_a= 25°C±3°C

Parameter

Symbol

I_D

Conditions

Min

100

107

660

Typ

Max

470

460

Unit

Drain current ^*

V_DS= 2.0 V, R_d= 2.2 kW ± 1%

V_DS= 2.0 V, R_d= 2.2 kW ± 1%, V_GS= 0

V_D= 2.0 V, V_GS= 0, f = 1 kHz

Drain-source current ^*

I_DSS

Forward transfer conductance

1500

Y_fs

V_D= 2.0 V, R_d= 2.2 kW ± 1%

C_O= 5 pF, A-curve

Noise voltage ^*

G_V1

G_V2

G_V3

V_D= 2.0 V, R_d= 2.2 kW ± 1%

C_O= 5 pF, e_G= 10 mV, f = 1 kHz

–5.0

–3.0

–7.0

–1.0

3.0

V_D= 12 V, R_d= 2.2 kW ± 1%

C_O= 5 pF, e_G= 10 mV, f = 1 kHz

Voltage gain

V_D= 1.5 V, R_d= 2.2 kW ± 1%

C_O= 5 pF, e_G= 10 mV, f = 1 kHz

–1.5

V_D= 2.0 V, R_d= 2.2 kW ± 1%

C_O= 5 pF, e_G= 10 mV

f = 1 kHz to 70 Hz

DG_V. f ^*

1.7

2.0

Voltage gain difference

Gate resistance

0.5

G_V1– G_V3



R_g

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. A protection diode is built-in between gate and source of transistor. However if forward current ﬂows between gate and source transistor

might be damaged. So please be careful not insert reverse.

3. *1: I_Dis assured for I_DSS

2: Rank classiﬁcation

Rank

I_DSS(mA)

107 to 150

130 to 220

180 to 315

285 to 460

3: NV is assured for design.

4: D|G_V. f | is assured for AQL 0.065. (The measurement method is used by source-grounded circuit.)

Publication date: August 2008

SJF00093CED

12 3 4

中文翻译

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与2SK3862G-U相关器件

型号	品牌	获取价格	描述	数据表
2SK3862R	PANASONIC	获取价格	Small Signal Field-Effect Transistor, 0.00047A I(D), 20V, 1-Element, N-Channel, Silicon, J
2SK3862S	PANASONIC	获取价格	Small Signal Field-Effect Transistor, 0.00047A I(D), 20V, 1-Element, N-Channel, Silicon, J
2SK3863	TOSHIBA	获取价格	Silicon N-Channel MOS Type Switching Regulator Applications
2SK3863_10	TOSHIBA	获取价格	Switching Regulator Applications
2SK3864	TOSHIBA	获取价格	TRANSISTOR 45 A, 120 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-10S2B, SC-64
2SK3866	PANASONIC	获取价格	Small Signal Field-Effect Transistor, 0.00033A I(D), 20V, 1-Element, N-Channel, Silicon, J
2SK3866G-S	PANASONIC	获取价格	Small Signal Field-Effect Transistor, 0.00033A I(D), 20V, 1-Element, N-Channel, Silicon, J
2SK3866G-T	PANASONIC	获取价格	Small Signal Field-Effect Transistor, 0.00022A I(D), 20V, 1-Element, N-Channel, Silicon, J
2SK3866S	PANASONIC	获取价格	Small Signal Field-Effect Transistor, 0.00022A I(D), 20V, 1-Element, N-Channel, Silicon, J
2SK3866T	PANASONIC	获取价格	Small Signal Field-Effect Transistor, 0.00033A I(D), 20V, 1-Element, N-Channel, Silicon, J

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