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2SK3864 PDF预览

2SK3864

更新时间： 2024-02-19 12:30:37
品牌 Logo 应用领域
东芝 - TOSHIBA 开关脉冲晶体管
页数 文件大小 规格书
6页 238K
描述
TRANSISTOR 45 A, 120 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-10S2B, SC-64, 3 PIN, FET General Purpose Power

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2SK3864 技术参数

生命周期：Active零件包装代码：SC-64
包装说明：SMALL OUTLINE, R-PSSO-G2针数：3
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.74雪崩能效等级（Eas）：84 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：120 V最大漏极电流 (Abs) (ID)：45 A
最大漏极电流 (ID)：45 A最大漏源导通电阻：0.025 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PSSO-G2
元件数量：1端子数量：2
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：100 W最大脉冲漏极电流 (IDM)：180 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子形式：GULL WING
端子位置：SINGLE晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

2SK3864 数据手册

 浏览型号2SK3864的Datasheet PDF文件第2页浏览型号2SK3864的Datasheet PDF文件第3页浏览型号2SK3864的Datasheet PDF文件第4页浏览型号2SK3864的Datasheet PDF文件第5页浏览型号2SK3864的Datasheet PDF文件第6页 
2SK3864  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)  
2SK3864  
PDP Sustain Circuit Applications  
Switching Regulator Applications  
Unit: mm  
•
•
•
•
Low drain-source ON resistance: R  
= 20 mΩ (typ.)  
DS (ON)  
High forward transfer admittance: |Y | = 75 S (typ.)  
fs  
= 100 µA (max) (V  
Low leakage current: I  
= 120 V)  
DSS  
DSS  
Enhancement mode: V = 2.0~4.0 V (V  
= 10 V, I = 1 mA)  
th  
DS  
D
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Drain-source voltage  
Drain-gate voltage (R  
V
120  
120  
±20  
45  
V
V
V
DSS  
= 20 kΩ)  
V
DGR  
GS  
Gate-source voltage DC  
V
GSS  
DC  
(Note 1)  
I
D
Drain current  
A
Pulse (Note 1)  
I
180  
100  
DP  
Drain power dissipation (Tc = 25°C)  
P
W
D
AS  
AR  
JEDEC  
JEITA  
―
Single pulse avalanche energy  
(Note 2)  
SC-64  
2-10S2B  
E
84  
mJ  
TOSHIBA  
Avalanche current  
I
45  
10  
A
Weight: 1.5 g (typ.)  
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
T
150  
ch  
Storage temperature range  
T
−55~150  
stg  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and  
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
Thermal Characteristics  
Characteristics  
Symbol  
Max  
1.25  
Unit  
Thermal resistance, channel to case  
R
°C/W  
th (ch-c)  
Note 1: Ensure that the channel temperature does not exceed 150℃.  
Note 2: = 50 V, T = 25°C (initial), L = 54 µH, R = 25 Ω, I = 45 A  
V
DD  
ch AR  
G
Note 3: Repetitive rating; pulse width limited by maximum channel temperature.  
This transistor is an electrostatic-sensitive device. Please handle with caution.  
1
2006-11-20  
123456

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