2SK3880
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSIV)
2SK3880
Switching Regulator Applications
Unit: mm
•
•
•
•
Low drain-source ON resistance: R
= 1.35Ω (typ.)
DS (ON)
High forward transfer admittance: |Y | = 5.2 S (typ.)
fs
Low leakage current: I
= 100μA (max) (V
= 640 V)
DSS
DS
Enhancement model: V = 2.0~4.0 V (V
= 10 V, I = 1 mA)
D
th
DS
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Symbol
Rating
Unit
V
800
800
±30
6.5
V
V
V
DSS
Drain-gate voltage (R
Gate-source voltage
= 20 kΩ)
V
GS
DGR
V
GSS
DC
(Note 1)
I
D
Drain current
A
Pulse (Note 1)
I
19.5
80
DP
Drain power dissipation (Tc = 25°C)
P
W
D
AR
AR
Single pulse avalanche energy
JEDEC
JEITA
―
―
E
375
mJ
(Note 2)
Avalanche current
I
6.5
8
A
TOSHIBA
2-16F1B
Repetitive avalanche energy (Note 3)
Channel temperature
E
mJ
°C
°C
AR
Weight: 5.8 g (typ.)
T
ch
150
Storage temperature range
T
stg
−55~150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
2
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
R
1.56
41.6
°C/W
°C/W
th (ch-c)
R
th (ch-a)
1
Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device.
Note 2: = 90 V, T = 25°C (initial), L = 16.1 mH, R = 25 Ω, I = 6.5 A
V
DD
ch
G
AR
3
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
2006-11-13