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2SK3899 PDF预览

2SK3899

更新时间: 2024-09-25 22:52:59
品牌 Logo 应用领域
日电电子 - NEC 开关
页数 文件大小 规格书
8页 154K
描述
SWITCHING N-CHANNEL POWER MOSFET

2SK3899 数据手册

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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK3899  
SWITCHING  
N-CHANNEL POWER MOS FET  
DESCRIPTION  
ORDERING INFORMATION  
The 2SK3899 is N-channel MOS Field Effect Transistor  
PART NUMBER  
PACKAGE  
designed for high current switching applications.  
2SK3899-ZK  
TO-263 (MP-25ZK)  
FEATURES  
Super low on-state resistance  
RDS(on)1 = 5.3 mMAX. (VGS = 10 V, ID = 42 A)  
RDS(on)2 = 6.5 mMAX. (VGS = 4.5 V, ID = 42 A)  
Low Ciss: Ciss = 5500 pF TYP.  
Built-in gate protection diode  
(TO-263)  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC) (TC = 25°C)  
Drain Current (pulse) Note1  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT1  
60  
±20  
V
V
±84  
A
±336  
146  
A
Total Power Dissipation (TC = 25°C)  
Total Power Dissipation (TA = 25°C)  
Channel Temperature  
W
W
°C  
°C  
mJ  
A
PT2  
1.5  
Tch  
150  
55 to +150  
245  
Storage Temperature  
Tstg  
Single Avalanche Energy Note2  
Repetitive Avalanche Current Note3  
Repetitive Avalanche Energy Note3  
EAS  
IAR  
49.5  
EAR  
245  
mJ  
Notes 1. PW 10 µs, Duty Cycle 1%  
2. Starting Tch = 25°C, VDD = 30 V, RG = 25 , VGS = 20 0 V, L = 100 µH  
3. RG = 25 , Tch(peak) 150°C  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. D17174EJ1V0DS00 (1st edition)  
Date Published May 2004 NS CP(K)  
Printed in Japan  
2004  

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