生命周期: | Active | 零件包装代码: | TO-247AA |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.76 |
雪崩能效等级(Eas): | 3478.2 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 150 V | 最大漏极电流 (ID): | 100 A |
最大漏源导通电阻: | 0.016 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-247AA | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 400 A | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK3883-01 | FUJI |
获取价格 |
TO-247 | |
2SK3884-01 | FUJI |
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Power Field-Effect Transistor, 100A I(D), 250V, 0.03ohm, 1-Element, N-Channel, Silicon, Me | |
2SK3885-01 | FUJI |
获取价格 |
TO-247 | |
2SK3886-01MR | FUJI |
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Power Field-Effect Transistor, 67A I(D), 120V, 0.03ohm, 1-Element, N-Channel, Silicon, Met | |
2SK3887-01 | FUJI |
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N-CHANNEL SILICON POWER MOSFET | |
2SK3888-01MR | FUJI |
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N-CHANNEL SILICON POWER MOSFET | |
2SK3889-01L | FUJI |
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N-CHANNEL SILICON POWER MOSFET | |
2SK3889-01S | FUJI |
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N-CHANNEL SILICON POWER MOSFET | |
2SK3889-01SJ | FUJI |
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N-CHANNEL SILICON POWER MOSFET | |
2SK389 | TOSHIBA |
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N CHANNEL JUNCTION TYPE (LOW NOISE AUDIO AND DIFFERENTIAL AMPLIFIER APPLICATIONS) |