2SK3872-01L,S,SJ
N-CHANNEL SILICON POWER MOSFET
200406
Outline Drawings (mm)
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching
No secondary breakdown
Avalanche-proof
Low on-resistance
Low driving power
See to P4
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Equivalent circuit schematic
Item
Symbol
Ratings
230
Unit
V
Remarks
Drain(D)
Drain-source voltage
VDS
V
VDSX
ID
230
VGS=-30V
A
Continuous Drain Current
Pulsed Drain Current
40
A
ID(puls]
VGS
IAR
±160
±30
V
Gate(G)
Gate-Source Voltage
Maximum Avalanche current
Non-Repetitive
A
40
Note *1
Note *2
Source(S)
mJ
EAS
633.1
<
Note *1:Tch 150°C,Repetitive and Non-repetitive
=
Maximum Avalanche Energy
Repetitive
Note *2:StartingTch=25°C,IAS=16A,L=4.09mH,
mJ
EAR
27
Note *3
VCC=48V,RG=50Ω
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. Power Dissipation
EAS limited by maximum channel temperature
and Avalanche current.
kV/µs
dVDS/dt
dV/dt
PD
20
5
<
VDS 230V
=
kV/µs Note *4
See to the ‘Avalanche Energy’ graph
Note *3:Repetitive rating:Pulse width limited by
maximum channel temperature.
See to the ‘Transient Thermal impedance’
graph.
270
2.02
+150
Tc=25°C
Ta=25°C
W
Operating and Storage
Temperature range
Tch
°C
°C
Tstg
-55 to +150
<
<
<
Note *4:IF -ID, -di/dt=50A/µs,VCC BVDSS,Tch 150°C
Electrical characteristics (Tc =25°C unless otherwise specified)
=
=
=
Min.
Typ.
Max. Units
Symbol
BVDSS
VGS(th)
Item
Test Conditions
µ
V
Drain-Source Breakdown Voltage
Gate Threshold Voltage
230
3.0
ID= 250 A
VGS=0V
VDS=VGS
µ
V
5.0
25
ID= 250 A
µA
VDS=230V VGS=0V
Tch=25°C
Zero Gate Voltage Drain Current
IDSS
250
100
76
Tch=125°C
VDS=184V VGS=0V
VGS=±30V
VDS=0V
ID=20A VGS=10V
ID=20A VDS=25V
VDS=75V
IGSS
RDS(on)
gfs
nA
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
58
24
mΩ
S
12
Ciss
Coss
Crss
td(on)
tr
1880
230
12
2820
345
18
pF
Output Capacitance
VGS=0V
Reverse Transfer Capacitance
Turn-On Time ton
f=1MH
VCC=180V ID=20A
ns
28
42
8.4
12.6
VGS=10V
56
84
td(off)
tf
Turn-Off Time toff
RGS=10 Ω
6
9
42.0
18.0
12.0
63.0
27.0
18.0
QG
nC
Total Gate Charge
VCC=115V
ID=40A
QGS
QGD
VSD
Gate-Source Charge
Gate-Drain Charge
VGS=10V
1.10
230
2.5
1.50
V
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
IF=40A VGS=0V Tch=25°C
IF=40A VGS=0V
-di/dt=100A/µs
Tch=25°C
trr
Qrr
ns
µC
Thermal characteristics
Item
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min.
Typ.
Max. Units
0.463 °C/W
Thermal resistance
°C/W
75
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