Datasheet > 2SK3863_10

2SK3863_10

更新时间： 2024-09-24 07:32:39

品牌	Logo	应用领域
东芝 - TOSHIBA		稳压器开关
页数	文件大小	规格书
6页	231K
描述
Switching Regulator Applications

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中文翻译

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数据手册

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2SK3863_10 数据手册

2SK3863

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)

2SK3863

Unit: mm

Switching Regulator Applications

6.8 MAX.

5.2 ± 0.2

0.6 MAX.

•

Low drain-source ON-resistance: R

= 1.35 Ω (typ.)

DS (ON)

High forward transfer admittance: |Y | = 2.8 S (typ.)

Low leakage current: I

= 100 μA (V

= 500 V)

DSS

Enhancement model: V = 2.0 to 4.0 V (V

= 10 V, I = 1 mA)

0.95 MAX.

0.6 ± 0.15

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Drain-source voltage

Symbol

Rating

Unit

0.6 MAX.

2.3 2.3

500

±30

DSS

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

GSS

(Note 1)

1. GATE

2. DRAIN

（HEAT SINK）

3. SOURSE

Drain current

Pulse (t = 1 ms)

(Note 1)

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

JEDEC

―

180

(Note 2)

JEITA

SC-64

2-7B5B

Avalanche current

TOSHIBA

Repetitive avalanche energy (Note 3)

Channel temperature

°C

Weight: 0.36 g (typ.)

150

Storage temperature range

stg

-55 to 150

6.8 MAX.

5.2 ± 0.2

0.6 MAX.

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.)

may cause this product to decrease in the reliability significantly even if the

operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings. Please design the appropriate reliability

upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual reliability data

(i.e. reliability test report and estimated failure rate, etc).

0.6 ± 0.15

0.95 MAX.

0.6 ± 0.15

0.6 MAX.

2.3

Thermal Characteristics

2.3 2.3

Characteristic

Thermal resistance, channel to case

Symbol

Max

Unit

3.125

°C/W

th (ch-c)

1. GATE

2. DRAIN

（HEAT SINK）

3. SOURSE

Note 1: Ensure that the channel temperature does not exceed 150°C

during use of the device.

Note 2:

= 90 V, T = 25°C (initial), L = 12.2 mH, I

= 5 A, R = 25 Ω

AR G

JEDEC

―

Note 3: Repetitive rating: pulse width limited by maximum channel

temperature

JEITA

TOSHIBA

2-7B7B

This transistor is an electrostatic-sensitive device. Handle with care.

Weight: 0.36 g (typ.)

2010-04-13

12 3 4 5 6

中文翻译

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与2SK3863_10相关器件

型号	品牌	获取价格	描述	数据表
2SK3864	TOSHIBA	获取价格	TRANSISTOR 45 A, 120 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-10S2B, SC-64
2SK3866	PANASONIC	获取价格	Small Signal Field-Effect Transistor, 0.00033A I(D), 20V, 1-Element, N-Channel, Silicon, J
2SK3866G-S	PANASONIC	获取价格	Small Signal Field-Effect Transistor, 0.00033A I(D), 20V, 1-Element, N-Channel, Silicon, J
2SK3866G-T	PANASONIC	获取价格	Small Signal Field-Effect Transistor, 0.00022A I(D), 20V, 1-Element, N-Channel, Silicon, J
2SK3866S	PANASONIC	获取价格	Small Signal Field-Effect Transistor, 0.00022A I(D), 20V, 1-Element, N-Channel, Silicon, J
2SK3866T	PANASONIC	获取价格	Small Signal Field-Effect Transistor, 0.00033A I(D), 20V, 1-Element, N-Channel, Silicon, J
2SK3868	TOSHIBA	获取价格	Switching Regulator Applications
2SK3868(Q,M)	TOSHIBA	获取价格	MOSFET N-CH 500V 5A SC-67
2SK3868_09	TOSHIBA	获取价格	Switching Regulator Applications
2SK3869	TOSHIBA	获取价格	Silicon N-Channel MOS Type Switching Regulator Applications

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