Datasheet > 2SK3863

2SK3863

更新时间： 2024-09-24 04:26:35

品牌	Logo	应用领域
东芝 - TOSHIBA		稳压器开关
页数	文件大小	规格书
6页	297K
描述
Silicon N-Channel MOS Type Switching Regulator Applications

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2SK3863 技术参数

生命周期：	Obsolete	零件包装代码：	SC-64
包装说明：	SMALL OUTLINE, R-PSSO-G2	针数：	3
Reach Compliance Code：	unknown	风险等级：	5.82
雪崩能效等级（Eas）：	180 mJ	外壳连接：	DRAIN
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	500 V
最大漏极电流 (ID)：	5 A	最大漏源导通电阻：	1.5 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-30 代码：	R-PSSO-G2
元件数量：	1	端子数量：	2
工作模式：	ENHANCEMENT MODE	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	N-CHANNEL	最大脉冲漏极电流 (IDM)：	20 A
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	GULL WING	端子位置：	SINGLE
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

2SK3863 数据手册

2SK3863

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)

2SK3863

Switching Regulator Applications

Unit: mm

•

Low drain-source ON resistance: R

High forward transfer admittance: |Y | = 2.8S (typ.)

= 1.35Ω (typ.)

DS (ON)

Low leakage current: I

= 100 μA (V

= 500 V)

DSS

Enhancement model: V = 2.0~4.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Drain-source voltage

Symbol

Rating

Unit

500

±30

DSS

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

GSS

(Note 1)

Drain current

Pulse (t = 1 ms)

(Note 1)

Drain power dissipation (Tc = 25°C)

JEDEC

JEITA

―

Single pulse avalanche energy

180

(Note 2)

SC-64

2-7B7B

Avalanche current

TOSHIBA

Repetitive avalanche energy (Note 3)

Channel temperature

°C

Weight: 0.36 g (typ.)

150

Storage temperature range

-55~150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristic

Symbol

Max

Unit

Thermal resistance, channel to case

3.125

°C/W

th (ch-c)

Note 1: Ensure that the channel temperature does not exceed 150°C during

use of the device.

Note 2:

= 90 V, T = 25°C (initial), L = 12.2 mH, I

= 5 A, R = 25 Ω

AR G

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Handle with care.

2006-11-06

12 3 4 5 6

中文翻译

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与2SK3863相关器件

型号	品牌	获取价格	描述	数据表
2SK3863_10	TOSHIBA	获取价格	Switching Regulator Applications
2SK3864	TOSHIBA	获取价格	TRANSISTOR 45 A, 120 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-10S2B, SC-64
2SK3866	PANASONIC	获取价格	Small Signal Field-Effect Transistor, 0.00033A I(D), 20V, 1-Element, N-Channel, Silicon, J
2SK3866G-S	PANASONIC	获取价格	Small Signal Field-Effect Transistor, 0.00033A I(D), 20V, 1-Element, N-Channel, Silicon, J
2SK3866G-T	PANASONIC	获取价格	Small Signal Field-Effect Transistor, 0.00022A I(D), 20V, 1-Element, N-Channel, Silicon, J
2SK3866S	PANASONIC	获取价格	Small Signal Field-Effect Transistor, 0.00022A I(D), 20V, 1-Element, N-Channel, Silicon, J
2SK3866T	PANASONIC	获取价格	Small Signal Field-Effect Transistor, 0.00033A I(D), 20V, 1-Element, N-Channel, Silicon, J
2SK3868	TOSHIBA	获取价格	Switching Regulator Applications
2SK3868(Q,M)	TOSHIBA	获取价格	MOSFET N-CH 500V 5A SC-67
2SK3868_09	TOSHIBA	获取价格	Switching Regulator Applications

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