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2SK3850 PDF预览

2SK3850

更新时间: 2024-09-24 07:32:39
品牌 Logo 应用领域
三洋 - SANYO 晶体开关晶体管通用开关
页数 文件大小 规格书
4页 44K
描述
General-Purpose Switching Device Applications

2SK3850 技术参数

生命周期:Obsolete包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.82Is Samacsys:N
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:600 V最大漏极电流 (ID):0.7 A
最大漏源导通电阻:18.5 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSIP-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2SK3850 数据手册

 浏览型号2SK3850的Datasheet PDF文件第2页浏览型号2SK3850的Datasheet PDF文件第3页浏览型号2SK3850的Datasheet PDF文件第4页 
Ordering number : ENN8193  
N-Channel Silicon MOSFET  
General-Purpose Switching Device  
Applications  
2SK3850  
Features  
Best suited for motor drive.  
Low ON-resistance.  
Low Qg.  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Drain-to-Source Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
V
600  
±30  
0.7  
2.8  
1.0  
15  
DSS  
GSS  
Gate-to-Source Voltage  
Drain Current (DC)  
V
V
I
A
D
Drain Current (Pulse)  
I
PW10µs, duty cycle1%  
A
DP  
W
W
°C  
°C  
Allowable Power Dissipation  
P
D
Tc=25°C  
Channel Temperature  
Storage Temperature  
Tch  
150  
Tstg  
--55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
600  
max  
Drain-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
I
=1mA, V =0  
V
µA  
nA  
V
(BR)DSS  
D
GS  
=600V, V =0  
I
V
V
V
V
V
V
V
V
100  
±100  
3.5  
DSS  
DS  
GS  
DS  
DS  
GS  
DS  
DS  
DS  
GS  
I
=±30V, V =0  
DS  
GSS  
V (off)  
GS  
=10V, I =1mA  
2.5  
D
Forward Transfer Admittance  
Static Drain-to-Source On-State Resistance  
Input Capacitance  
yfs  
(on)  
=10V, I =0.35A  
280  
560  
14  
96  
29  
16  
mS  
D
R
=10V, I =0.35A  
D
18.5  
DS  
Ciss  
Coss  
Crss  
=20V, f=1MHz  
=20V, f=1MHz  
=20V, f=1MHz  
pF  
pF  
pF  
Output Capacitance  
Reverse Transfer Capacitance  
Marking :K3850  
Continued on next page.  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft's  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Sem iconductor Com pany  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
31005PB TS IM TA-101202  
No.8193-1/4  

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