生命周期: | Obsolete | 包装说明: | IN-LINE, R-PSIP-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.82 | Is Samacsys: | N |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 600 V | 最大漏极电流 (ID): | 0.7 A |
最大漏源导通电阻: | 18.5 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSIP-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK3851 | ALLEGRO |
获取价格 |
Power Field-Effect Transistor, MT-100, TO-3P, 3 PIN | |
2SK3856 | SANYO |
获取价格 |
2SK3856 | |
2SK3856-5 | ONSEMI |
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TRANSISTOR,MOSFET,N-CHANNEL,15V V(BR)DSS,30MA I(D),SOT-23 | |
2SK3856-6 | ONSEMI |
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TRANSISTOR,MOSFET,N-CHANNEL,15V V(BR)DSS,30MA I(D),SOT-23 | |
2SK3857MFV | TOSHIBA |
获取价格 |
暂无描述 | |
2SK3857MFV-A | TOSHIBA |
获取价格 |
TRANSISTOR 0.37 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, 2-1L1C, 3 PIN, FET General Purpose | |
2SK3857MFV-B | TOSHIBA |
获取价格 |
TRANSISTOR 0.37 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, 2-1L1C, 3 PIN, FET General Purpose | |
2SK3857TK | TOSHIBA |
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Silicon N Channel Junction Type For ECM | |
2SK3857TK-A | TOSHIBA |
获取价格 |
TRANSISTOR 0.37 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, LEAD FREE, 2-1R1A, TESM3, 3 PIN, FE | |
2SK3857TK-B | TOSHIBA |
获取价格 |
TRANSISTOR 0.37 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, LEAD FREE, 2-1R1A, TESM3, 3 PIN, FE |