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2SK3857TK-A PDF预览

2SK3857TK-A

更新时间: 2024-01-19 16:46:36
品牌 Logo 应用领域
东芝 - TOSHIBA 光电二极管晶体管
页数 文件大小 规格书
5页 106K
描述
TRANSISTOR 0.37 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, LEAD FREE, 2-1R1A, TESM3, 3 PIN, FET General Purpose Small Signal

2SK3857TK-A 技术参数

是否Rohs认证: 符合生命周期:Lifetime Buy
包装说明:SMALL OUTLINE, R-PDSO-F3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.25
配置:SINGLE WITH BUILT-IN DIODE AND RESISTOR最大漏极电流 (ID):0.00037 A
FET 技术:JUNCTIONJESD-30 代码:R-PDSO-F3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:DEPLETION MODE
最高工作温度:125 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):0.1 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:TIN LEAD
端子形式:FLAT端子位置:DUAL
晶体管元件材料:SILICONBase Number Matches:1

2SK3857TK-A 数据手册

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2SK3857TK  
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type  
2SK3857TK  
For ECM  
Unit: mm  
Application for Ultra-compact ECM  
1.2±0.05  
0.8±0.05  
Absolute Maximum Ratings (Ta=25°C)  
1
2
Characteristic  
Gate-Drain voltage  
Symbol  
Rating  
Unit  
3
V
-20  
10  
V
GDO  
Gate Current  
I
mA  
mW  
°C  
G
Drain power dissipation (Ta = 25°C)  
Junction Temperature  
P
100  
D
T
125  
j
Storage temperature range  
T
stg  
55~125  
°C  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e. operating  
temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
1.Drain  
2.Source  
3.Gate  
TESM3  
JEDEC  
JEITA  
-
-
Please design the appropriate reliability upon reviewing the Toshiba  
Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure rate,  
etc).  
TOSHIBA  
2-1R1A  
Weight: 2.2mg (typ.)  
IDSS CLASSIFICATION  
A-Rank  
B-Rank  
140~240µA  
210~350µA  
Marking  
Equivalent Circuit  
D
Type Name  
IDSS Classification Symbol  
A :A-Rank  
B :B-Rank  
G
9
S
1
2007-11-01  

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