Datasheet > 2SK3857TV-B

2SK3857TV-B

更新时间： 2024-01-21 17:25:56

品牌	Logo	应用领域
东芝 - TOSHIBA		光电二极管晶体管
页数	文件大小	规格书
5页	148K
描述
TRANSISTOR 0.37 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, LEAD FREE, 2-1H1A, VESM2, 3 PIN, FET General Purpose Small Signal

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中文翻译

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技术参数
数据手册

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2SK3857TV-B 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
包装说明：	LEAD FREE, 2-1H1A, VESM2, 3 PIN	针数：	3
Reach Compliance Code：	unknown	风险等级：	5.25
配置：	SINGLE WITH BUILT-IN DIODE AND RESISTOR	最大漏极电流 (ID)：	0.00037 A
FET 技术：	JUNCTION	JESD-30 代码：	R-PDSO-F3
元件数量：	1	端子数量：	3
工作模式：	DEPLETION MODE	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	N-CHANNEL	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	FLAT
端子位置：	DUAL	晶体管元件材料：	SILICON
Base Number Matches：	1

2SK3857TV-B 数据手册

2SK3857TV

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type

2SK3857TV

For ECM

Unit: mm

•

Application for Ultra-compact ECM

1.2±0.05

0.8±0.05

Absolute Maximum Ratings (Ta=25°C)

Characteristic

Gate-Drain voltage

Symbol

Rating

Unit

-20

GDO

Gate Current

°C

Drain power dissipation (Ta = 25°C)

Junction Temperature

100

125

Storage temperature range

stg

−55~125

°C

1.Drain

2.Source

3.Gate

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum

ratings.

VESM2

JEDEC

JEITA

Please design the appropriate reliability upon reviewing the Toshiba

Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

TOSHIBA

2-1H1A

Weight: 0.8mg (typ.)

IDSS CLASSIFICATION

A-Rank

B-Rank

140~240µA

210~350µA

Marking

Equivalent Circuit

Type Name

Top Gate

Lot Code

□

IDSS Classification Symbol

A :A-Rank

B :B-Rank

Precaution

There is a metal plate on the top of package, which has the same electrical potential as the Gate terminal. Don’t use

it as a terminal.

2007-11-01

12 3 4 5

中文翻译

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与2SK3857TV-B相关器件

型号	品牌	获取价格	描述	数据表
2SK386	TOSHIBA	获取价格	TRANSISTOR 10 A, 450 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
2SK3862G-S	PANASONIC	获取价格	Small Signal Field-Effect Transistor, 0.00047A I(D), 20V, 1-Element, N-Channel, Silicon, J
2SK3862G-U	PANASONIC	获取价格	Small Signal Field-Effect Transistor, 0.00047A I(D), 20V, 1-Element, N-Channel, Silicon, J
2SK3862R	PANASONIC	获取价格	Small Signal Field-Effect Transistor, 0.00047A I(D), 20V, 1-Element, N-Channel, Silicon, J
2SK3862S	PANASONIC	获取价格	Small Signal Field-Effect Transistor, 0.00047A I(D), 20V, 1-Element, N-Channel, Silicon, J
2SK3863	TOSHIBA	获取价格	Silicon N-Channel MOS Type Switching Regulator Applications
2SK3863_10	TOSHIBA	获取价格	Switching Regulator Applications
2SK3864	TOSHIBA	获取价格	TRANSISTOR 45 A, 120 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-10S2B, SC-64
2SK3866	PANASONIC	获取价格	Small Signal Field-Effect Transistor, 0.00033A I(D), 20V, 1-Element, N-Channel, Silicon, J
2SK3866G-S	PANASONIC	获取价格	Small Signal Field-Effect Transistor, 0.00033A I(D), 20V, 1-Element, N-Channel, Silicon, J

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