生命周期: | Obsolete | 包装说明: | , |
Reach Compliance Code: | compliant | 风险等级: | 5.76 |
配置: | Single | 最大漏极电流 (Abs) (ID): | 0.03 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 0.2 W | 子类别: | FET General Purpose Power |
表面贴装: | YES | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK3856-6 | ONSEMI |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,15V V(BR)DSS,30MA I(D),SOT-23 | |
2SK3857MFV | TOSHIBA |
获取价格 |
暂无描述 | |
2SK3857MFV-A | TOSHIBA |
获取价格 |
TRANSISTOR 0.37 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, 2-1L1C, 3 PIN, FET General Purpose | |
2SK3857MFV-B | TOSHIBA |
获取价格 |
TRANSISTOR 0.37 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, 2-1L1C, 3 PIN, FET General Purpose | |
2SK3857TK | TOSHIBA |
获取价格 |
Silicon N Channel Junction Type For ECM | |
2SK3857TK-A | TOSHIBA |
获取价格 |
TRANSISTOR 0.37 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, LEAD FREE, 2-1R1A, TESM3, 3 PIN, FE | |
2SK3857TK-B | TOSHIBA |
获取价格 |
TRANSISTOR 0.37 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, LEAD FREE, 2-1R1A, TESM3, 3 PIN, FE | |
2SK3857TV | TOSHIBA |
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Silicon N Channel Junction Type For ECM | |
2SK3857TV-B | TOSHIBA |
获取价格 |
TRANSISTOR 0.37 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, LEAD FREE, 2-1H1A, VESM2, 3 PIN, FE | |
2SK386 | TOSHIBA |
获取价格 |
TRANSISTOR 10 A, 450 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power |