是否Rohs认证: | 符合 | 生命周期: | Transferred |
包装说明: | LEAD FREE, 2-1H1A, VESM2, 3 PIN | 针数: | 3 |
Reach Compliance Code: | unknown | 风险等级: | 5.28 |
配置: | SINGLE WITH BUILT-IN DIODE AND RESISTOR | 最大漏极电流 (ID): | 0.00034 A |
FET 技术: | JUNCTION | JESD-30 代码: | R-PDSO-F3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | DEPLETION MODE | 最高工作温度: | 125 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | FLAT | 端子位置: | DUAL |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK3582TV-B | TOSHIBA |
获取价格 |
TRANSISTOR 0.34 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, 2-1H1A, VESM2, 3 PIN, FET General P | |
2SK3585G | PANASONIC |
获取价格 |
Small Signal Field-Effect Transistor, 0.00046A I(D), 1-Element, N-Channel, Silicon, Juncti | |
2SK3586 | FUJI |
获取价格 |
N CHANNEL SILICON POWER MOSFET | |
2SK3586-01 | FUJI |
获取价格 |
N CHANNEL SILICON POWER MOSFET | |
2SK3586-01_03 | FUJI |
获取价格 |
N-CHANNEL SILICON POWER MOSFET | |
2SK3587-01MR | FUJI |
获取价格 |
N-CHANNEL SILICON POWER MOSFET | |
2SK3588-01L | FUJI |
获取价格 |
N-CHANNEL SILICON POWER MOSFET | |
2SK3588-01L_03 | FUJI |
获取价格 |
N-CHANNEL SILICON POWER MOSFET | |
2SK3588-01S | FUJI |
获取价格 |
N-CHANNEL SILICON POWER MOSFET | |
2SK3588-01SJ | FUJI |
获取价格 |
N-CHANNEL SILICON POWER MOSFET |